4407 datasheet(1/4 Pages) HOTTECH

Part #	4407

Description	P-Channel Enhancement Mode MOSFET

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Manufacturer	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

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Plastic-Encapsulate Mosfets

GUANGDONG

HOTTECH

INDUSTRIAL

CO., LTD.

FEATURES

VDS (V) = -30V

ID = -12A

RDS(ON) < 11mΩ (VGS = -20V)

RDS(ON) < 13mΩ (VGS = -10V)

RDS(ON) < 38mΩ (VGS = -10V)

Absolute Maximum Ratings (TA=25oC, unless otherwise noted)

Parameter

Symbol

10 Sec

Steady State

Unit

Drain-Source Voltage

V

DS

-30

V

Gate-Source Voltage

V

GS

±25

V

Continuous Drain

Current

A

T

A=25°C

I

-12

-9.2

A

T =70°C

-10

-7.4

Pulsed Drain Current

B

I

DM

-60

Avalanche Current

G

I

AR

26

Repetitive avalanche energy L=0.3Mh

G

E

AR

101

mJ

Power Dissipation

A

T

A=25°C

P

D

3.1

1.7

W

T

A=70°C

2.0

1.1

Junction and Storage Temperature Range

T

J, TSTG

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Unit

Maximum Junction-to-Ambient

A

t ≤ 10s

R

θJA

32

40

°C/W

Maximum Junction-to-Ambient

A

Steady State

60

75

°C/W

Maximum Junction-to-Lead

C

Steady State

R

θJL

17

24

°C/W

4407

P-Channel MOSFET

G

S

D

G

D

S

Top View

SOP-8

P-Channel Enhancement Mode MOSFET

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4407 Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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