2SA1615-Z datasheet(1/2 Pages) ISC

Part #	2SA1615-Z

Description	isc Silicon PNP Power Transistor

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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isc Silicon PNP Power Transistor

2SA1615-Z

DESCRIPTION

·

Large current capacity:IC(DC)= -10A IC(pulse)=-15A

·

High hFE and low saturation voltage:

hFE= 200min (VCE=-2V,IC=-0.5A)

VCE(sat)≤-0.25V (IC=-4A,IB=-0.05A)

·

100% avalanche tested

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

The 2SA1615 is available for the large current control

in small dimension due to the low saturation and is

ideal for high efficiency DC/AC converters due to

the fast switching speed

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-30

V

VCEO

Collector-Emitter Voltage

-20

V

VEBO

Emitter-Base Voltage

-10

V

IC

Collector Current-Continuous

-10

A

ICM

Collector Current-Peak

-15

A

PC

Collector Power Dissipation

@ TC=25℃

15

W

Collector Power Dissipation

@Ta=25℃

1.0

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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2SA1615-Z Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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