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2N5932 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2N5932
Description  isc Silicon NPN Power Transistors
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N5932 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistors
2N5932
DESCRIPTION
·
DC Current Gain-
: hFE= 20-100@IC= 10A
·
Low Collector Saturation Voltage-
: VCE(sat)= 2.0V(Max)@ IC= 20A
APPLICATIONS
·
Designed for general purpose power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.875
℃
/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
70
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
30
A
IB
Base Current-Continuous
7.5
A
PC
Collector Power Dissipation @TC=25℃
175
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150
℃


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