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SSF7NS60D Datasheet(PDF) 1 Page - GOOD-ARK Electronics |
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SSF7NS60D Datasheet(HTML) 1 Page - GOOD-ARK Electronics |
1 / 7 page SSF7NS60D 600V N-Channel MOSFET www.goodark.com Page 1 of 7 Rev.1.0 Main Product Characteristics Features and Benefits Description Absolute Max Rating Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 7 ① ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 5 ① IDM Pulsed Drain Current ② 28 A Power Dissipation ③ 83 W PD @TC = 25°C Linear Derating Factor 0.67 W/°C VDS Drain-Source Voltage 600 V VGS Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy @ L=15.2mH 68 mJ IAR Avalanche Current @ L=15.2mH 3 A TJ TSTG Operating Junction and Storage Temperature Range -55 to + 150 °C VDSS 600V RDS(on) 0.56Ω (typ.) ID 7A ① TO-252 Marking and Pin Assignment Schematic Diagram High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Lead free product The SSF7NS60D series MOSFET is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low R DS (ON), energy saving, high reliability and uniformity, superior power density and space saving. |
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