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NCV1729SN35T1G Datasheet(PDF) 2 Page - ON Semiconductor

Part # NCV1729SN35T1G
Description  Switched Capacitor Voltage Inverter
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCV1729SN35T1G Datasheet(HTML) 2 Page - ON Semiconductor

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NCP1729
www.onsemi.com
2
MAXIMUM RATINGS*
Rating
Symbol
Value
Unit
Input Voltage Range (Vin to GND)
Vin
−0.3 to 6.0
V
Output Voltage Range (Vout to GND)
Vout
−6.0 to 0.3
V
Output Current
Iout
100
mA
Output Short Circuit Duration (Vout to GND)
tSC
Indefinite
sec
Operating Junction Temperature
TJ
150
°C
Power Dissipation and Thermal Characteristics
Thermal Resistance, Junction−to−Air
Maximum Power Dissipation @ TA = 70°C
RqJA
PD
256
313
°C/W
mW
Storage Temperature
Tstg
−55 to 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*ESD Ratings
ESD Machine Model Protection up to 200 V, Class B
ESD Human Body Model Protection up to 2000 V, Class 2
ELECTRICAL CHARACTERISTICS (Vin = 5.0 V, C1 = 3.3 mF, C2 = 3.3 mF, TA = −40°C to 85°C, typical values shown are for
TA = 25°C unless otherwise noted. See Figure 14 for Test Setup.)
Characteristic
Symbol
Min
Typ
Max
Unit
Operating Supply Voltage Range (SHDN = Vin, RL = 10 k)
Vin
1.5
5.5
V
Supply Current Device Operating (SHDN = 5.0 V, RL = R)
TA = 25°C
TA = 85°C
Iin
122
128
200
200
mA
Supply Current Device Shutdown (SHDN = 0 V)
TA = 25°C
TA = 85°C
ISHDN
0.4
1.7
mA
Oscillator Frequency
TA = 25°C
TA = −40°C to 85°C
fOSC
24.5
19
33.5
45.6
54
kHz
Output Resistance (Iout = 25 mA, Note 1)
Rout
26
50
W
Voltage Conversion Efficiency (RL = R)
VEFF
99
99.9
%
Power Conversion Efficiency (RL = 1.0 k)
PEFF
96
%
Shutdown Input Threshold Voltage (Vin = 1.5 V to 5.5 V)
High State, Device Operating
Low State, Device Shutdown
Vth(SHDN)
0.6 Vin
0.5 Vin
V
Shutdown Input Bias Current
High State, Device Operating, SHDN = 5.0 V
TA = 25°C
TA = 85°C
Low State, Device Shutdown, SHDN = 0 V
TA = 25°C
TA = 85°C
IIH
IIL
5.0
100
5.0
100
pA
Wake−Up Time from Shutdown (RL = 1.0 k)
tWKUP
1.0
ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Capacitors C1 and C2 contribution is approximately 20% of the total output resistance.


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