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NCP1081 Datasheet(PDF) 4 Page - ON Semiconductor |
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NCP1081 Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 18 page NCP1081 http://onsemi.com 4 SIMPLIFIED APPLICATION DIAGRAMS Figure 4. Non−Isolated Fly−back with Extra Winding Cpd NCP1081 GATE RTN FB VPORTN2 VDDH VDDL Rcs Cvddh C1comp C2comp Rcomp Css M1 R4 VPORTN1 CLASS ARTN ILIM1 INRUSH TEST1 TEST2 Rclass Rilim1 Rinrush R1 R2 UVLO CS VPORTP Rslope D1 D2 T1 R5 Voutput Spare Pairs RJ−45 DB1 DB2 LD1 Rd1 Cvddl nCLASS_AT R3 Cload Rosc Data Pairs Figure 4 shows the same non−isolated fly−back configuration as Figure 3, but adds a 12 V auxiliary bias winding on the transformer to provide power to the NCP1081 DC−DC controller via its VDDH pin. This topology shuts off the current flowing from VPORTP to VDDH and therefore reduces the internal power dissipation of the PD, resulting in higher overall power efficiency. Figure 5. Non−Isolated Forward Converter Cpd NCP1081 GATE RTN FB VPORTN2 VDDH VDDL Rcs Cvddh C1comp C2comp Rcomp Css M1 Cload R3 R4 VPORTN1 CLASS ARTN ILIM1 INRUSH TEST1 TEST2 Rclass Rilim1 Rinrush R1 R2 UVLO CS VPORTP L1 Rslope Voutput T1 D1 D2 D3 Spare Pairs RJ−45 DB1 DB2 LD1 Rd1 Cvddl nCLASS_AT Data Pairs Rosc Figure 5 shows the NCP1081 used in a non−isolated forward topology. High Power Considerations The NCP1081 is designed to implement various configurations of high−power PoE systems including those based on the IEEE802.3at standard. High power operation can be enabled by a Dual Event Layer 1 classification or a Single Event Layer 1 classification combined with a Layer 2 high power classification. The NCP1081 also supports proprietary designs capable of delivering 25 W to 40 W to the load in two−pair configurations. A separate application note describes these implementations (AND8332). |
Similar Part No. - NCP1081_13 |
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Similar Description - NCP1081_13 |
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