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NCP1081 Datasheet(PDF) 8 Page - ON Semiconductor

Part No. NCP1081
Description  Integrated High Power PoE-PD Interface & DC-DC Converter Contr
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NCP1081 Datasheet(HTML) 8 Page - ON Semiconductor

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NCP1081
http://onsemi.com
8
Table 3. OPERATING CONDITIONS
Symbol
Parameter
Min.
Typ.
Max.
Units
Conditions
UVLO
Vuvlo_on
Default turn on voltage (VportP rising)
38
40
V
UVLO pin tied to VPORTN1,2
Vuvlo_off
Default turn off voltage (VportP falling)
29.5
32
V
UVLO pin tied to VPORTN1,2
Vhyst_int
UVLO internal hysteresis
6
V
UVLO pin tied to VPORTN1,2
Vuvlo_pr
UVLO external programming range
25
50
V
UVLO pin connected to the
resistor divider (R1 & R2).
For information only
Vhyst_ext
UVLO external hysteresis
15
%
UVLO pin connected to the
resistor divider (R1 & R2)
Uvlo_Filter
UVLO on/off filter time
90
mS
For information only
PASS−SWITCH AND CURRENT LIMITS
Ron
Pass−switch Rds−on
0.6
1.2
W
Max Ron specified at
Tj = 130°C
I_Rinrush1
Rinrush = 150 kW (Note 9)
95
125
155
mA
Measured at RTN−
VPORTN1,2 = 3 V
I_Rinrush2
Rinrush = 57.6 kW (Note 9)
260
310
360
mA
Measured at RTN−
VPORTN1,2 = 3 V
I_Rilim1
Rilim1 = 84.5 kW (Note 9)
450
510
570
mA
Current limit threshold
I_Rilim2
Rilim1 = 66.5 kW (Note 9)
600
645
690
mA
Current limit threshold
I_Rilim3
Rilim1 = 55.6 kW (Note 9)
720
770
820
mA
Current limit threshold
I_Rilim4
Rilim1 = 38.3 kW (Note 9)
970
1100
1230
mA
Current limit threshold
INRUSH AND ILIM1 CURRENT LIMIT TRANSITION
Vds_pgood
VDS required for power good status
0.8
1
1.2
V
RTN−VPORTN1,2 falling; Volt-
age with respect to VPORTN1,2
Vds_pgood_hyst
VDS hysteresis required for power
good status
8.2
V
Voltage with respect to
VPORTN1,2
9. The current value corresponds to the PoE−PD input current (the current flowing in the external Rdet and the quiescent current of the device
are included). Resistors are assumed to have 1% accuracy.


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