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LMH6533 Datasheet(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part No. LMH6533
Description  Four - Channel Laser Diode Driver with Dual Output, LVDS Interface and HFM Oscillator
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Maker  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
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LMH6533 Datasheet(HTML) 2 Page - National Semiconductor (TI)

 
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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Tolerance
Human Body Model
2KV (Note 2)
Machine Model
200V (Note 3)
Supply Voltage (V
+ –V)
5.5V
Differential Input Voltage
±5.5V
Output Short Circuit to Ground
(Note 4)
Continuous
Input Common Mode Voltage
V
to V+
Storage Temperature Range
−65˚C to +150˚C
Junction Temperature (Note 5)
+150˚C
Operating Ratings (Note 1)
Supply Voltage (V
+ -V)
4.5V
≤ V
S
≥ 5.5V
Operating Temp. Range (T
A)
(Note 8)
−40˚C
≤ T
A
≤ 85˚C
Thermal Resistance
(Note 5), (Note 8)
LLP Package
θ
JC
3˚C/W
θ
JA (no heatsink)
42˚C/W
θ
JA (with heatsink) see (Note 9)
30.8˚C/W
I
INR/3/4
1.5 mA (max)
I
IN2
1.0 mA (max)
R
FREQ
1000
Ω (min)
R
AMP
300
F
OSC
100-600 MHz
A
OSC
10-100 mA
PP
+5V DC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
J = 25˚C, RL =10
Ω. Boldface limits apply at the temperature extremes.
(Note 8)
Symbol
Parameter
Conditions
Min
(Note 7)
Typ
(Note 6)
Max
(Note 7)
Units
LVDS
V
I
Input Voltage Range
|V
GPD| < 50 mV
(Note 7), (Note 9), (Note 11)
825
1550
1575
mV
V
IDTH
Input Diff. Threshold
V
GPD < 50 mV
(Note 7), (Note 9), (Note 11)
–100
0
100
mV
V
HYST
Input Diff. Hysteresis
V
IDTHH –VIDTH1
(Note 7), (Note 9), (Note 11)
25
0
mV
R
IN
Input Diff. Impedance
(Note 7), (Note 9),(Note 11)
80
104
120
I
IN
Input Current
Excluding R
IN Current VCM = 1.25V
5
50
µA
Current Channels
R
IN
Input Resistance all Channels
R
IN to Ground
425
556
675
I
OS
Current Offset
All Channels Off (Note 12)
–7.5
4.75
7.5
mA
A
IW
Current Gain
Channel 2 (Note 13)
270
303
330
A/A
A
IR
Current Gain
Channels 3,4 and Read (Note 13)
135
152
165
A/A
I
LIN-R,3,4
Output Current Linearity
500 µA < L
IN < 1000 µA; RLOAD =
10
Ω Channels Read, 3 and 4
–3.5
2.5
+3.5
%
I
LIN-2
Output Current Linearity
500 µA < L
IN < 1000 µA; RLOAD =
10
Ω Channels 2
–8
5
+8
%
IOUT
W
Output Current
Channel 2 (Note 12) @ 1mA Input
Current
250
263
mA
IOUT
R,3,4
Output Current
Channel 3, 4 and Read (Note 12) @
1 mA Input Current
135
150
mA
IOUT
TOTAL Total Output Current
All Channels (Note 14); R
LOAD =5
500
mA
V
TLO
TTL Low Voltage
ENR, ENOSC Input (H to L)
1.51
0.8
V
V
ELO
Enable Low Voltage
Enable Input (H to L)
2.41
0.8
V
V
THI
TTL High Voltage
ENR, ENOSC Inputs (L to H )
2.0
1.54
V
V
EHI
Enable High Voltage
Enable Input (L to H)
2.8
2.4
V
I
SPD
Supply Current, Power Down
Enable = Low (Note 12)
0.003
0.5
mA
I
Sr1
Supply Current, Read Mode,
Oscillator Disabled
ENOSC = Low; (Note 12)
I2=I3=I4=I
R = 125 µA
98.5
120
mA
I
Sr2
Supply Current, Read Mode,
Oscillator Enabled
ENOSC = High; (Note 12)
I2=I3=I4=I
R = 125 µA
98.5
120
mA
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