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K6X0808T1D-YQ70 Datasheet(PDF) 1 Page - Samsung semiconductor |
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K6X0808T1D-YQ70 Datasheet(HTML) 1 Page - Samsung semiconductor |
1 / 9 page CMOS SRAM K6X0808T1D Family Revision 1.0 December 2003 1 Document Title 32Kx8 bit Low Power CMOS Static RAM Revision History Revision No. 0.0 0.1 0.2 1.0 Remark Preliminary Preliminary Preliminary Final History Initial draft revised - errata : corrected 28-SOP-525 to 28-SOP-450 in pakage type revised - Added commercial product. Finalized - Changed ICC from 3mA to 2mA - Changed ICC2 from 25mA to 20mA - Changed ISB from 3mA to 0.4mA - Changed ISB1 for K6X0808T1D-F from 10 µA to 6µA - Changed ISB1 for K6X0808T1D-F from 20 µA to 10µA - Changed IDR for K6X0808T1D-F 10 µA to 6µA - Changed IDR for K6X0808T1D-Q 20 µA to 10µA - Errata correction Draft Data October 09, 2002 November 08, 2002 March 27, 2003 December 16, 2003 The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices. |
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