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K9S1208V0 Datasheet(PDF) 4 Page - Samsung semiconductor

Part # K9S1208V0
Description  64MB & 128MB SmartMediaTM Card
Download  37 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K9S1208V0 Datasheet(HTML) 4 Page - Samsung semiconductor

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SmartMediaTM
4
K9S1208V0M/A-SSB0
K9D1G08V0M/A-SSB0
64MB & 128MB SmartMediaTM Card
Using Nand flash memory, SmartMedia provides the most cost-
effective solution for the solid state mass storage market. A pro-
gram operation is implemented by the single page of 528 bytes
in typical 200
µs and an erase operation is done by the single
block of 16K bytes in typical 2ms. Data in the page can be read
out at 50ns cycle time per byte. The I/O pins serve as the ports
for address and data input/output as well as command inputs.
The on-chip write controller automates all program and erase
functions including pulse repetition, where required, and inter-
nal verification and margining of data. Even the write-intensive
systems
can
take
advantage
of
the
K9D1G08V0X,
K9S1208V0X
′s extended reliability of 100K program/erase
cycles by providing ECC(Error Correcting Code) with real time
mapping-out algorithm. SmartMedia is an optimum solution for
large nonvolatile storage applications such as solid state file
storage, digital voice recorder, digital still camera and other por-
table applications requiring non-volatility.
GENERAL DESCRIPTION
FEATURES
•Single 2.7V~3.6V Supply
•Organization
- Memory Cell Array :
- K9S1208V0X: (64M + 2,048K)bit x 8bit
- K9D1G08V0X: (128M + 4,096K)bit x 8bit
- Data Register : (512 + 16)bit x8bit
•Automatic Program and Erase
- Page Program : (512 + 16)Byte
* Multi Page Program : 2K Bytes
- Block Erase : (16K + 512)Byte
•528-Byte Page Read Operation
- Random Access : 12
µs(Max.)
- Serial Page Access : 50ns(Min.)
•Fast Write Cycle Time
- Program Time : 200
µs(Typ.)
- Block Erase Time : 2ms(Typ.)
•Command/Address/Data Multiplexed I/O Port
•Hardware Data Protection
- Program/Erase Lockout During Power Transitions
•Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
•Command Register Operation
•22pad SmartMediaTM(SSFDC)
•Unique ID for Copyright Protection
SmartMediaTM CARD(SSFDC)
Pin Name
Pin Function
I/O0 ~ I/O7
Data Input/Outputs
CLE
Command Latch Enable
ALE
Address Latch Enable
CE
Chip Enable
RE
Read Enable
WE
Write Enable
WP
Write Protect
LVD
Low Voltage Detect
GND
Ground
R/B
Ready/Busy output
VCC
Power
VSS
Ground
N.C
No Connection
PIN DESCRIPTION
12
13
14
15
16
17
18
19
20
21
22
VCC
I/O4
I/O5
I/O6
I/O7
LVD
GND
R/B
RE
CE
VCC
11
10
9
8
7
6
5
4
3
2
1
VSS
VSS
I/O3
I/O2
I/O1
I/O0
WP
WE
ALE
CLE
VSS
22 PAD SmartMediaTM
12
22
11
1
ID 128MB
NOTE : Connect all VCC and VSS pins of each device to common power supply outputs and do not leave VCC or VSS disconnected.
The pin 17(LVD) is used to detect 5V or 3.3V product electrically. Please, refer to the SmartMedia Application note for detail.


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