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K6X4016C3F-TF55 Datasheet(PDF) 3 Page - Samsung semiconductor |
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K6X4016C3F-TF55 Datasheet(HTML) 3 Page - Samsung semiconductor |
3 / 9 page K6X4016C3F Family CMOS SRAM Revision 1.0 September 2003 3 PRODUCT LIST Commercial Products(0~70 °°C) Industrial Products(-40~85 °°C) Automotive Products(-40~125 °°C) Part Name Function Part Name Function Part Name Function K6X4016C3F-TB55 K6X4016C3F-TB70 44-TSOP2-F, 55ns, LL 44-TSOP2-F, 70ns, LL K6X4016C3F-TF55 K6X4016C3F-TF70 44-TSOP2-F, 55ns, LL 44-TSOP2-F, 70ns, LL K6X4016C3F-TQ55 K6X4016C3F-TQ70 44-TSOP2-F, 55ns, L 44-TSOP2-F, 70ns, L ABSOLUTE MAXIMUM RATINGS1) 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Item Symbol Ratings Unit Remark Voltage on any pin relative to Vss VIN,VOUT -0.5 to VCC+0.5V(max. 7.0V) V - Voltage on Vcc supply relative to Vss VCC -0.3 to 7.0 V - Power Dissipation PD 1.0 W - Storage temperature TSTG -65 to 150 °C - Operating Temperature TA 0 to 70 °C K6X4016C3F-B -40 to 85 K6X4016C3F-F -40 to 125 K6X4016C3F-Q FUNCTIONAL DESCRIPTION 1. X means don ′t care. (Must be in low or high state) CS OE WE LB UB I/O1~8 I/O9~16 Mode Power H X1) X1) X1) X1) High-Z High-Z Deselected Standby L H H X1) X1) High-Z High-Z Output Disabled Active L X1) X1) H H High-Z High-Z Output Disabled Active L L H L H Dout High-Z Lower Byte Read Active L L H H L High-Z Dout Upper Byte Read Active L L H L L Dout Dout Word Read Active L X1) L L H Din High-Z Lower Byte Write Active L X1) L H L High-Z Din Upper Byte Write Active L X1) L L L Din Din Word Write Active |
Similar Part No. - K6X4016C3F-TF55 |
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Similar Description - K6X4016C3F-TF55 |
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