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K6X0808T1D Datasheet(PDF) 4 Page - Samsung semiconductor

Part No. K6X0808T1D
Description  32Kx8 bit Low Power CMOS Static RAM
Download  9 Pages
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Maker  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
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K6X0808T1D Datasheet(HTML) 4 Page - Samsung semiconductor

   
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CMOS SRAM
K6X0808T1D Family
Revision 1.0
December 2003
4
RECOMMENDED DC OPERATING CONDITIONS1)
Note:
1. Industrial Product: TA=-40 to 85
°C, Otherwise specified
Automotive Product: TA=-40 to 125
°C, Otherwise specified
2. Overshoot: Vcc+3.0V in case of pulse width
≤30ns.
3. Undershoot: -3.0V in case of pulse width
≤30ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Min
Typ
Max
Unit
Supply voltage
Vcc
2.7
3.0/3.3
3.6
V
Ground
Vss
0
0
0
V
Input high voltage
VIH
2.2
-
Vcc+0.22)
V
Input low voltage
VIL
-0.23)
-
0.6
V
CAPACITANCE1) (f=1MHz, TA=25
°C)
1. Capacitance is sampled, not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
CIN
VIN=0V
-
8
pF
Input/Output capacitance
CIO
VIO=0V
-
10
pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min Typ Max Unit
Input leakage current
ILI
VIN=Vss to Vcc
-1
-
1
µA
Output leakage current
ILO
CS=VIH or OE=VIH or WE=VIL, VIO=VSS to Vcc
-1
-
1
µA
Operating power supply current
ICC
IIO=0mA, CS=VIL, VIN=VIH or VIL, Read
-
-
2
mA
Average operating current
ICC1
Cycle time=1
µs, 100% duty, IIO=0mA, CS≤0.2V,
VIN
≤0.2VIN≥Vcc -0.2V
-
-
3
mA
ICC2
Cycle time=Min,100% duty, IIO=0mA, CS=VIL, VIN=VIH or VIL
-
-
20
mA
Output low voltage
VOL
IOL=2.1mA
-
-
0.4
V
Output high voltage
VOH
IOH=-1.0mA
2.4
-
-
V
Standby Current(TTL)
ISB
CS=VIH, Other inputs=VIH or VIL
-
-
0.3
mA
Standby Current(CMOS)
ISB1
CS
≥Vcc-0.2V, Other inputs=0~Vcc
K6X0808T1D-F
-
-
6
µA
K6X0808T1D-Q
-
-
10
µA


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