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SSF4607D Datasheet(PDF) 1 Page - GOOD-ARK Electronics |
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SSF4607D Datasheet(HTML) 1 Page - GOOD-ARK Electronics |
1 / 8 page SSF4607D 30V P-Channel MOSFET www.goodark.com Page 1 of 8 Rev.1.0 Main Product Characteristics VDSS -30V RDS(on) 19mΩ(typ.) ID -25A ① Features and Benefits Description Absolute Max Rating Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V(Silicon Limited) -25 ① ID @ TC = 100°C Continuous Drain Current, VGS @ 10V -20 ① IDM Pulsed Drain Current ② -60 A PD @TC = 25°C Power Dissipation 41 W VDS Drain-Source Voltage -30 V VGS Gate-to-Source Voltage ± 20 V TJ TSTG Operating Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Symbol Characteristics Typ. Max. Units RθJC Junction-to-case③ — 3 ℃/W Junction-to-ambient (t ≤ 10s) ④ — 25 ℃/W RθJA Junction-to-Ambient (PCB mounted, steady-state) ④ — 50 ℃/W Marking and Pin Assignment Schematic Diagram Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Lead free product It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. TO-252 D G S |
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