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SSF2418E Datasheet(PDF) 2 Page - GOOD-ARK Electronics |
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SSF2418E Datasheet(HTML) 2 Page - GOOD-ARK Electronics |
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2 / 6 page  SSF2418E 20V Dual N-Channel MOSFET www.goodark.com Page 2 of 6 Rev.1.0 Electrical Characteristics @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 20 — — V VGS = 0V, ID = 250μA — 18 21 VGS=4.5V,ID = 6A — 19 22 VGS=4V,ID = 5.5A — 21 26 VGS=3.1V,ID = 5A RDS(on) Static Drain-to-Source on-resistance — 25 30 mΩ VGS=2.5V,ID = 4A VGS(th) Gate threshold voltage 0.5 — 1 V VDS = VGS, ID = 250μA IDSS Drain-to-Source leakage current — — 1 μA VDS = 20V,VGS = 0V — — 10 VGS =10V IGSS Gate-to-Source forward leakage -10 — — μA VGS = -10V gFS Forward Transconductance — 7 — S VDS=5V,ID=6A Qg Total gate charge — 8 — Qgs Gate-to-Source charge — 1.5 — Qgd Gate-to-Drain("Miller") charge — 2 — nC VDS=10V, ID=6A, VGS=4.5V td(on) Turn-on delay time — 20 — tr Rise time — 50 — td(off) Turn-Off delay time — 64 — tf Fall time — 40 — ns VDD=10V,ID=1A VGS=4.5V,RGEN=10Ω Ciss Input capacitance — 650 — Coss Output capacitance — 170 — Crss Reverse transfer capacitance — 150 — pF VGS = 0V VDS = 10V ƒ = 1.0MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 6 A ISM Pulsed Source Current (Body Diode) — — 30 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 0.76 1.1 V IS=1A, VGS=0V |
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