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DS90LV032A Datasheet(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Part No. DS90LV032A
Description  3V LVDS Quad CMOS Differential Line Receiver
Download  9 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

DS90LV032A Datasheet(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
CC)
−0.3V to +4V
Input Voltage (R
IN+,RIN−)
−0.3V to +3.9V
Enable Input Voltage (EN, EN*)
−0.3V to (V
CC + 0.3V)
Output Voltage (R
OUT)
−0.3V to (V
CC + 0.3V)
Maximum Package Power Dissipation +25˚C
M Package
1025 mW
MTC Package
866 mW
Derate M Package
8.2 mW/˚C above +25˚C
Derate MTC Package
6.9 mW/˚C above +25˚C
Storage Temperature Range
−65˚C to +150˚C
Lead Temperature Range
(Soldering 4 sec.)
+260˚C
Maximum Junction Temperature
+150˚C
ESD Rating (Note 10)
(HBM 1.5 k
Ω, 100 pF)
≥ 4.5 kV
(EIAJ 0
Ω, 200 pF)
≥ 250 V
Recommended Operating
Conditions
Min
Typ
Max
Units
Supply Voltage (V
CC)
+3.0
+3.3
+3.6
V
Receiver Input Voltage
GND
+3.0
V
Operating Free Air
Temperature (T
A)
−40
25
+85
˚C
Electrical Characteristics
Over Supply Voltage and Operating Temperature ranges, unless otherwise specified. (Note 2)
Symbol
Parameter
Conditions
Pin
Min
Typ
Max
Units
V
TH
Differential Input High Threshold
V
CM = +1.2V
(Note 13)
R
IN+,
R
IN−
+20
+100
mV
V
TL
Differential Input Low Threshold
−100
−20
mV
VCMR
Common-Mode Voltage Range
VID = 200 mV peak to peak (Note 5)
0.1
2.3
V
I
IN
Input Current
V
IN = +2.8V
V
CC = 3.6V or 0V
−10
±1
+10
µA
V
IN = 0V
−10
±1
+10
µA
V
IN = +3.6V
V
CC = 0V
-20
+20
µA
V
OH
Output High Voltage
I
OH = −0.4 mA, VID = +200 mV
R
OUT
2.7
3.0
V
I
OH = −0.4 mA, Input terminated
2.7
3.0
V
I
OH = −0.4 mA, Input shorted
2.7
3.0
V
V
OL
Output Low Voltage
I
OL = 2 mA, VID = −200 mV
0.1
0.25
V
I
OS
Output Short Circuit Current
Enabled, V
OUT = 0V (Note 11)
−15
−48
−120
mA
I
OZ
Output TRI-STATE Current
Disabled, V
OUT =0VorVCC
−10
±1
+10
µA
V
IH
Input High Voltage
EN,
EN*
2.0
V
CC
V
V
IL
Input Low Voltage
GND
0.8
V
I
I
Input Current
V
IN =0VorVCC, Other Input = VCC or
GND
−10
±1
+10
µA
V
CL
Input Clamp Voltage
I
CL = −18 mA
−1.5
−0.8
V
I
CC
No Load Supply Current
EN, EN* = V
CC or GND, Inputs Open
V
CC
10
15
mA
Receivers Enabled
EN, EN* = 2.4V or 0.5V, Inputs Open
10
15
mA
I
CCZ
No Load Supply Current
Receivers Disabled
EN = GND, EN* = V
CC, Inputs Open
3
5
mA
Switching Characteristics
Over Supply Voltage and Operating Temperature ranges, unless otherwise specified. (Notes 3, 4, 7, 8)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
t
PHLD
Differential Propagation Delay High to Low
C
L = 10 pF
1.8
3.3
ns
t
PLHD
Differential Propagation Delay Low to High
V
ID = 200 mV
1.8
3.3
ns
t
SKD1
Differential Pulse Skew |t
PHLD −tPLHD| (Note 6)
(
Figure 1 and Figure 2)
0
0.1
0.35
ns
t
SKD2
Differential Channel-to-Channel Skew-same device
(Note 7)
0
0.1
0.5
ns
t
SKD3
Differential Part to Part Skew (Note 8)
1.0
ns
t
SKD4
Differential Part to Part Skew (Note 9)
1.5
ns
t
TLH
Rise Time
0.35
1.2
ns
t
THL
Fall Time
0.35
1.2
ns
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