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CY7C1342-55JI Datasheet(PDF) 5 Page - Cypress Semiconductor

Part # CY7C1342-55JI
Description  4K x 8 Dual-Port Static RAM and 4K x 8 Dual-Port SRAM with Semaphores
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1342-55JI Datasheet(HTML) 5 Page - Cypress Semiconductor

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CY7C135
CY7C1342
Document #: 38-06038 Rev. *B
Page 5 of 12
Switching Characteristics Over the Operating Range[7, 8]
7C135–15
7C1342–15
7C135–20
7C1342–20
7C135–25
7C1342–25
7C135–35
7C1342–35
7C135–55
7C1342–55
Parameter
Description
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
READ CYCLE
tRC
Read Cycle Time
15
20
25
35
55
ns
tAA
Address to Data Valid
15
20
25
35
55
ns
tOHA
Output Hold From
Address Change
3
3
3
3
3
ns
tACE
CE LOW to Data Valid
15
20
25
35
55
ns
tDOE
OE LOW to Data Valid
10
13
15
20
25
ns
tLZOE
[9,10,11]
OE Low to Low Z
3
3
3
3
3
ns
tHZOE
[9,10,11]
OE HIGH to High Z
10
13
15
20
25
ns
tLZCE
[9,10,11]
CE LOW to Low Z
3
3
3
3
3
ns
tHZCE
[9,10,11]
CE HIGH to High Z
10
13
15
20
25
ns
tPU
[11]
CE LOW to Power Up
0
0
0
0
0
ns
tPD
[11]
CE HIGH to Power Down
15
20
25
35
55
ns
WRITE CYCLE
tWC
Write Cycle Time
15
20
25
35
55
ns
tSCE
CE LOW to Write End
12
15
20
30
50
ns
tAW
Address Set-Up to Write End
12
15
20
30
50
ns
tHA
Address Hold from Write End
2
2
2
2
2
ns
tSA
Address Set-Up to Write Start
0
0
0
0
0
ns
tPWE
Write Pulse Width
12
15
20
25
50
ns
tSD
Data Set-Up to Write End
10
13
15
15
25
ns
tHD
Data Hold from Write End
0
0
0
0
0
ns
tHZWE
[10,11]
R/W LOW to High Z
10
13
15
20
25
ns
tLZWE
[10,11]
R/W HIGH to Low Z
3
3
3
3
3
ns
tWDD
[12]
Write Pulse to Data Delay
30
40
50
60
70
ns
tDDD
[12]
Write Data Valid to Read
Data Valid
25
30
30
35
40
ns
SEMAPHORE TIMING[13]
tSOP
SEM Flag Update Pulse
(OE or SEM)
10
10
10
15
15
ns
tSWRD
SEM Flag Write to Read Time
5
5
5
5
5
ns
tSPS
SEM Flag Contention Window
5
5
5
5
5
ns
Notes:
7.
See the last page of this specification for Group A subgroup testing information.
8.
Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
IOL/IOH and 30-pF load capacitance.
9.
At any given temperature and voltage condition for any given device, tHZCE is less than tLZCE and tHZOE is less than tLZOE.
10. Test conditions used are Load 3.
11. This parameter is guaranteed but not tested.
12. For information on port-to-port delay through RAM cells from writing port to reading port, refer to Read Timing with Port-to-Port Delay waveform.
13. Semaphore timing applies only to CY7C1342.


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