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CY7C1041B
5
Switching Characteristics[4] Over the Operating Range (continued)
Parameter
Description
7C1041B-20
7C1041B-25
Unit
Min.
Max.
Min.
Max.
READ CYCLE
tpower
VCC(typical) to the First Access
[5]
11
1
tRC
Read Cycle Time
20
25
ns
tAA
Address to Data Valid
20
25
ns
tOHA
Data Hold from Address Change
3
5
ns
tACE
CE LOW to Data Valid
20
25
ns
tDOE
OE LOW to Data Valid
8
10
ns
tLZOE
OE LOW to Low Z
0
0
ns
tHZOE
OE HIGH to High Z[6, 7]
810
ns
tLZCE
CE LOW to Low Z[7]
35
ns
tHZCE
CE HIGH to High Z[6, 7]
810
ns
tPU
CE LOW to Power-Up
0
0
ns
tPD
CE HIGH to Power-Down
20
25
ns
tDBE
Byte Enable to Data Valid
8
10
ns
tLZBE
Byte Enable to Low Z
0
0
ns
tHZBE
Byte Disable to High Z
8
10
ns
WRITE CYCLE[8, 9]
tWC
Write Cycle Time
20
25
ns
tSCE
CE LOW to Write End
13
15
ns
tAW
Address Set-Up to Write End
13
15
ns
tHA
Address Hold from Write End
0
0
ns
tSA
Address Set-Up to Write Start
0
0
ns
tPWE
WE Pulse Width
13
15
ns
tSD
Data Set-Up to Write End
9
10
ns
tHD
Data Hold from Write End
0
0
ns
tLZWE
WE HIGH to Low Z[7]
35
ns
tHZWE
WE LOW to High Z[6, 7]
810
ns
tBW
Byte Enable to End of Write
13
15
ns
Data Retention Characteristics Over the Operating Range (L version only)
Parameter
Description
Conditions[11]
Min.
Max.
Unit
VDR
VCC for Data Retention
2.0
V
ICCDR
Data Retention Current
Com’l
L
VCC = VDR = 3.0V,
CE > VCC – 0.3V,
VIN > VCC – 0.3V or VIN < 0.3V
200
µA
tCDR
[3]
Chip Deselect to Data Retention Time
0
ns
tR
[10]
Operation Recovery Time
tRC
ns
Notes:
10. tr < 3 ns for the -12 and -15 speeds. tr < 5 ns for the -20 and slower speeds.
11. No input may exceed VCC + 0.5V.