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AM160N03-03D Datasheet(PDF) 1 Page - Analog Power |
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AM160N03-03D Datasheet(HTML) 1 Page - Analog Power |
1 / 5 page Analog Power AM160N03-03D N-Channel 30-V (D-S) MOSFET VDS (V) ID (A) 30 93 Symbol Limit Units VDS 30 VGS ±20 Continuous Drain Current a TC=25°C ID 93 IDM 350 IS 93 A Power Dissipation a TC=25°C PD 50 W TJ, Tstg -55 to 175 °C Symbol Maximum Units RθJA 40 RθJC 3 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature A Maximum Junction-to-Ambient a Maximum Junction-to-Case Gate-Source Voltage PRODUCT SUMMARY rDS(on) (mΩ) 3.9 @ VGS = 10V Pulsed Drain Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Automotive Systems • DC/DC Conversion Circuits • Battery Powered Power Tools © Preliminary 1 Publication Order Number: DS_AM160N03-03D_1A |
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