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AM40N10-30I Datasheet(PDF) 1 Page - Analog Power |
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AM40N10-30I Datasheet(HTML) 1 Page - Analog Power |
1 / 5 page Analog Power AM40N10-30I N-Channel 100-V (D-S) MOSFET VDS (V) ID (A) 31 29 Symbol Limit Units VDS 100 VGS ±20 Continuous Drain Current a TC=25°C ID 31.0 IDM 80 TC=25°C IS 40 A Power Dissipation a TC=25°C PD 50 W TJ, Tstg -55 to 175 °C Symbol Maximum Units RθJA 40 RθJC 3 Notes a. Package Limited b. Pulse width limited by maximum junction temperature c. Surface Mounted on 1” x 1” FR4 Board. A Maximum Junction-to-Ambient c Maximum Junction-to-Case Continuous Source Current (Diode Conduction) a Gate-Source Voltage PRODUCT SUMMARY 100 rDS(on) (mΩ) 36 @ VGS = 10V 42 @ VGS = 4.5V Pulsed Drain Current b THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits TO-251 © Preliminary 1 Publication Order Number: DS_AM40N10-30I_1A |
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