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DS90LV017 Datasheet(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part No. DS90LV017
Description  LVDS Single High Speed Differential Driver
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Maker  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
Logo NSC - National Semiconductor (TI)

DS90LV017 Datasheet(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
CC)
−0.3V to +6V
Input Voltage (DI)
−0.3V to (V
CC + 0.3V)
Output Voltage (DO±)
−0.3V to +3.9V
Maximum Package Power Dissipation @ +25˚C
M Package
1190 mW
Derate M Package
9.5 mW/˚C above +25˚C
Storage Temperature Range
−65˚C to +150˚C
Lead Temperature Range
Soldering (4 sec.)
+260˚C
ESD Rating (Note 4)
(HBM 1.5 k
Ω, 100 pF)
≥ 4.5 kV
Recommended Operating
Conditions
Min
Typ
Max
Units
Supply Voltage (V
CC)
3.0
3.3
3.6
V
Temperature (T
A)
0
25
70
˚C
Electrical Characteristics
Over Supply Voltage and Operating Temperature ranges, unless otherwise specified. (Notes 2, 3, 7)
Symbol
Parameter
Conditions
Pin
Min
Typ
Max
Units
DIFFERENTIAL DRIVER CHARACTERISTICS
V
OD
Output Differential Voltage
R
L = 100
Ω (Figure 1 )
DO+,
DO−
250
340
450
mV
∆V
OD
V
OD Magnitude Change
0
10
35
mV
V
OH
Output High Voltage
1.43
1.6
V
V
OL
Output Low Voltage
0.9
1.09
V
V
OS
Offset Voltage
0.9
1.25
1.6
V
∆V
OS
Offset Magnitude Change
0
5
25
mV
I
OZD
TRI-STATE® Leakage
V
OUT =VCC or GND
0
±1
±10
µA
I
OXD
Power-off Leakage
V
OUT = 3.6V or GND, VCC =0V
0
±1
±10
µA
I
OSD
Output Short Circuit Current
−4
−6
mA
V
IH
Input High Voltage
DI
2.0
V
CC
V
V
IL
Input Low Voltage
GND
0.8
V
I
IH
Input High Current
V
IN = 3.6V or 2.4V
±1
±10
µA
I
IL
Input Low Current
V
IN = GND or 0.5V
±1
±10
µA
V
CL
Input Clamp Voltage
I
CL = −18 mA
−1.5
−0.8
V
I
CC
Power Supply Current
No Load
V
IN =VCC or GND
V
CC
14
mA
R
L = 100
4.5
7
mA
Switching Characteristics
Over Supply Voltage and Operating Temperature Ranges, unless otherwise specified. (Notes 5, 6)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DIFFERENTIAL DRIVER CHARACTERISTICS
t
PHLD
Differential Propagation Delay High to Low
R
L = 100
Ω,C
L =5pF
(Figure 2 and Figure 3)
1.5
3.4
6
ns
t
PLHD
Differential Propagation Delay Low to High
1.5
3.5
6
ns
t
SKD
Differential Skew |t
PHLD −tPLHD|
0
0.1
1.9
ns
t
TLH
Transition Low to High Time
0
1
3
ns
t
THL
Transition High to Low Time
0
1
3
ns
Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices
should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation.
Note 2: Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground except VOD.
Note 3: All typicals are given for: VCC = +3.3V and TA = +25˚C.
Note 4: ESD Rating: HBM (1.5 k
Ω, 100 pF) ≥ 4.5 kV
Note 5: CL includes probe and fixture capacitance.
Note 6: Generator waveform for all tests unless otherwise specified:f=1 MHz, ZO =50Ω,tr ≤ 6 ns, tf ≤ 6 ns (10%-90%).
Note 7: The DS90LV017 is a current mode device and only function with datasheet specification when a resistive load is applied to the drivers outputs.
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