POWER MANAGEMENT.

FEATURES

Including two devices in US6.

(Ultra Super mini type with 6 leads)

Simplify circuit design.

Reduce a quantity of parts and manufacturing process.

DIM

MILLIMETERS

A

B

D

G

US6

2.00 0.20

1.25 0.1

2.1 0.1

0.2+0.10/-0.05

0-0.1

0.9 0.1

0.65

0.15+0.1/-0.05

B1

H

C

T

G

1

3

2

B

B1

D

T

6

4

1.3 0.1

A1

5

+_

+_

+_

+_

+_

1. Q EMITTER

4. Q SOURCE

3. Q DRAIN

5. Q GATE

6. Q COLLECTOR

1

2

2. Q BASE

1

1

2

2

2008. 9. 23

1/6

SEMICONDUCTOR

TECHNICAL DATA

KTX421U

Revision No : 1

12

3

6

54

Q1

Q2

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

15

V

Collector-Emitter Voltage

12

V

Emitter-Base Voltage

6

V

Collector Current

500

mA

1

A

Collector Power Dissipation

150

mW

Junction Temperature

150

Storage Temperature Range

-55

150

BS

123

4

5

6

Lot No.

Type Name

MARKING

EQUIVALENT CIRCUIT (TOP VIEW)

* Single Pulse PW=1mS.

** 120mW per element must not be exceeded. Each terminal mounted on a recommended land.

THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.

PLEASE HANDLE WITH CAUTION.

CHARACTERISTIC

SYMBOL

RATING

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

20

V

DC Drain Current

100

mA

Drain Power Dissipation

150

mW

Channel Temperature

150

Storage Temperature Range

-55

150

** 120mW per element must not be exceeded. Each terminal mounted on a recommended land.

EPITAXIAL PLANAR NPN TRANSISTOR

N CHANNEL MOS FIELD EFFECT TRANSISTOR