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NCP81278MNTXG Datasheet(PDF) 7 Page - ON Semiconductor |
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NCP81278MNTXG Datasheet(HTML) 7 Page - ON Semiconductor |
7 / 13 page NCP81278 www.onsemi.com 7 ELECTRICAL CHARACTERISTICS (VIN = 12 V, VPVCC = 5 V, VREFIN = 1.0 V, VPSI = 1.8 V, typical values are referenced to TA = TJ = 25°C, Min and Max values are referenced to TA = TJ = −40°C to 100°C. unless other noted.) Characteristics Units Max Typ Min Symbol Test Conditions POWER SAVE INPUT Low Threshold PS2: 1−Phase Auto CCM/DCM Mode VlowPSI 0.3 V Internal Pull High Resistance PSI to internal 2.0 V 110 k W Internal Pull Low Resistance PSI to GND 90 k W SOFT START and PGOOD Vout Startup Delay From EN to Vout Start up (Note 8) 250 ms Vout Startup Slew Rate (Note 8) 0.643 V/ms PGOOD Startup Delay From EN to PGOOD assertion 2.0 ms PGOOD Shutdown Delay From EN to PGOOD de−assertion 125 ns PGOOD Low Voltage IPGOOD= 4 mA (sink) VlPGOOD − − 0.3 V PGOOD Leakage Current PGOOD = 5 V IlkgPGOOD − − 1.0 mA PROTECTION Current Limit Threshold Measured from GND to PHx (RILMT (1%) is connected from COMP to GND) RILMT = open VOCTH 80 91 102 mV RILMT = 75.0 k 100 112 124 RILMT = 56.2 k 123 137 151 RILMT = 33.2 k 164 183 201 RILMT = 11 k OCP is disabled − Source Current of OCP Programming Source out COMP pin IILMT 9.5 10 10.5 mA Fast Under Voltage Protection (FUVP) Threshold Voltage from FB to GND 0.15 0.2 0.25 V Fast Under Voltage Protection (FUVP) Delay (Note 8) 1.0 ms Slow Under Voltage Protection (SUVP) Threshold Voltage from COMP to GND 3.0 V Slow Under Voltage Protection (SUVP) Delay (Note 8) 50 ms Over Voltage Protection (OVP) Threshold Voltage from FB to GND 1.85 2.0 2.15 V Over Voltage Protection (OVP) Delay (Note 8) 1.0 ms Over Temperature Protection (OTP) Threshold (Note 8) Tsd 140 150 °C Recovery Temperature Threshold (Note 8) Trec 125 °C Over Temperature Protection (OTP) Delay (Note 8) 125 ns OUTPUT DISCHARGE Output Discharge Resistance per Phase Measured from PHx to GND when EN is low (Note 8) Rdischrg 5 k W PWM−VID BUFFER Input High Threshold VhighVID 1.5 V Input Mid Voltage level VmidVID 0.6 1.2 V Input Low Threshold VlowVID 0.3 V Internal Pull High Resistance in VID Pin VID to internal 2.0 V 110 k W Internal Pull Low Resistance in VID Pin VID to GND 90 k W 3−State Shut−Off Time TD_HOLD− OFF 350 ns Buffer Output Rise Time Tr 3 ns 8. Guaranteed by design, not tested in production. |
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