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NCP1631DR2G Datasheet(PDF) 3 Page - ON Semiconductor |
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NCP1631DR2G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 24 page NCP1631 www.onsemi.com 3 Table 2. TYPICAL ELECTRICAL CHARACTERISTICS TABLE (Conditions: VCC = 15 V, Vpin7 = 2 V, Vpin10 = 0 V; for typical values TJ = 25°C, for min/max values TJ = −55°C to +125°C, unless otherwise specified) (Note 6) Characteristics Test Conditions Symbol Min Typ Max Unit STARTUP AND SUPPLY CIRCUITS Supply Voltage Startup Threshold Minimum Operating Voltage Hysteresis VCC(on) – VCC(off) Internal Logic Reset VCC increasing VCC decreasing VCC decreasing VCC(on) VCC(off) VCC(hyst) VCC(reset) 11 9.5 1.5 4.0 11.85 10 1.85 5.75 12.7 10.5 − 7.5 V Startup current VCC = 9.4 V ICC(start) − 35 100 mA Supply Current Device Enabled/No output load on pin6 Current that discharges VCC in latch mode Current that discharges VCC in OFF mode Fsw = 130 kHz (Note 4) VCC = 15 V, Vpin10 = 5 V VCC = 15 V, pin 7 grounded ICC1 ICC(latch) ICC(off) − – − 5.0 0.4 0.4 7.0 0.8 0.8 mA OSCILLATOR AND FREQUENCY FOLDBACK Clamping Charging Current Pin 6 open TJ = −40°C to +125°C TJ = −55°C to +125°C (Note 6) IOSC(clamp) 31.5 30 35 35 38.5 38.5 mA Charge Current with no frequency foldback Pin 6 grounded TJ = −40°C to +125°C TJ = −55°C to +125°C (Note 6) IOSC(CH1) 126 120 140 140 154 154 mA Charge Current @ Ipin6 = 50 mA Ipin6 = 50 mA IOSC(CH2) 76.5 85 93.5 mA Maximum Discharge Current with no frequency foldback Pin 6 grounded TJ = −40°C to +125°C TJ = −55°C to +125°C (Note 6) IOSC(DISCH1) 94.5 90 105 105 115.5 115.5 mA Discharge Current @ Ipin6 = 50 mA Ipin6 = 50 mA IOSC(DISCH2) 45 50 55 mA Voltage on pin 6 Ipin6 = 50 mA, Vpin5 = 2.5 V VFF 0.9 1.0 1.3 V Oscillator Upper Threshold VOSC(high) − 5 − V Oscillator Lower Threshold VOSC(low) 3.6 4.0 4.4 V Oscillator Swing (Note 5) VOSC(swing) 0.93 0.98 1.03 V CURRENT SENSE Current Sense Voltage Offset Ipin9 = 100 mA Ipin9 = 10 mA VCS(TH100) VCS(TH10) −20 −10 0 0 20 10 mV Current Sense Protection Threshold TJ = 25°C TJ = −40°C to 125°C TJ = −55°C to +125°C (Note 6) IILIM1 202 194 173 210 210 210 226 226 226 mA Threshold for In−rush Current Detection (Note 5) TJ = −40°C to +125°C TJ = −55°C to +125°C Iin−rush 11 10.4 14 14 17 17 mA GATE DRIVE Drive Resistance DRV1 Sink DRV1 Source DRV2 Sink DRV2 Source Ipin14 = 100 mA Ipin14 = −100 mA Ipin11 = 100 mA Ipin11 = −100 mA RSNK1 RSRC1 RSNK2 RSRC2 – – – – 7 15 7 15 15 25 15 25 Ω Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. DRV1 and DRV2 pulsating at half this frequency, that is, 65 kHz. 5. Not tested. Guaranteed by design and characterization. 6. For coldest temperature, QA sampling at −40 °C in production and −55°C specification is Guaranteed by Characterization. |
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