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NCP694HSANADJT1G Datasheet(PDF) 4 Page - ON Semiconductor |
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NCP694HSANADJT1G Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 17 page NCP694 http://onsemi.com 4 ELECTRICAL CHARACTERISTICS FOR FIX VERSION (Vin = Vout(nom.) + 1.0 V, VCE = Vin, Cin = 4.7 mF, Cout = 4.7 mF, TA = 25°C, unless otherwise noted) Characteristic Symbol Min Typ Max Unit Output Voltage (TA = 25°C, Iout = 100 mA, Vin−Vout = 1 V) 0.8 V 1.0 V 1.2 V 2.5 V 3.3 V Vout 0.770 0.970 1.170 2.450 3.234 0.8 1.0 1.2 2.5 3.3 0.830 1.030 1.030 2.550 3.366 V Output Current (Vin−Vout = 1 V) Iout 1 A Input voltage Vin 1.4 6.0 V Line Regulation (Iout = 100 mA) Regline − 0.05 0.2 %/V Load Regulation (Iout = 1 mA to 300 mA, Vin = Vout + 2.0 V) Regload03 −15 −2 15 mV Load Regulation (Iout = 1 mA to 1 A, Vin = Vout + 2.0 V) Regload1 − −3 − mV Supply Current (Iout = 0 A, (Vin − Vout) = 1 V, VCE = Vin) Iss 60 100 mA Standby Current (VCE = 0V, Vin = 6.0 V) Istby 0.1 1.0 mA Short Current Limit (Vout = 0 V) Ish 250 mA Output Voltage Temperature Coefficient Tc − $100 − ppm/°C Enable Input Threshold Voltage (Voltage Increasing, Output Turns On, Logic High) (Voltage Decreasing, Output Turns Off, Logic Low) VthCE 1.0 0 − − 6 0.4 V Enable Pull−down Current 100 220 nA Drop Output Voltage (TA = 25°C, Iout = 300 mA) 0.8 V Output voltage Vout (V) 1.0 V 1.2 V 2.5 V 3.3 V Vin−Vout 0.33 0.22 0.18 0.10 0.05 0.570 0.470 0.320 0.150 0.100 V Drop Output Voltage (TA = 25°C, Iout = 1A) 0.8 V Output voltage Vout (V) 1.0 V 1.2 V 2.5 V 3.3 V Vin−Vout 0.72 0.64 0.56 0.32 0.18 V Ripple Rejection (Ripple 200 mVpp, Iout =100 mA, f = 1 kHz) PSRR 70 dB Output Noise (BW = 10 Hz to 100 kHz, Iout = 1 mA) Vnoise 30 mVrms Thermal Shutdown Temperature/Hysteresis Tshd/Hyst 150/30 °C RDS(on) of additional output transistor (D version only) RDS(on) 30 W 2. Maximum package power dissipation limits must be observed. 3. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. |
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