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NCP1239GD100R2G Datasheet(PDF) 6 Page - ON Semiconductor |
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NCP1239GD100R2G Datasheet(HTML) 6 Page - ON Semiconductor |
6 / 26 page NCP1239 www.onsemi.com 6 Table 4. ELECTRICAL CHARACTERISTICS (continued) (For typical values TJ = 25°C, for min/max Values TJ = −40°C to +125°C, VHV = 125 V, VCC = 11 V unless otherwise noted) Parameter Unit Max Typ Min Symbol Test Conditions SUPPLY SECTION Internal IC Consumption VFB = 3.2 V, FSW = 100 kHz and CL = 1 nF ICC2 − 3.1 4.0 mA Internal IC Consumption in Skip Cycle VCC = 12 V, VFB = 0.775 V Driving 8 A/650 V MOSFET ICC(stb) − 500 − mA Internal IC Consumption in Fault Mode Fault or Latch ICC3 − 400 − mA Internal IC Consumption before Start-Up VCC(min) < VCC < VCC(on) ICC4 − 310 − mA Internal IC Consumption before Start-Up VCC < VCC(min) ICC5 − 20 − mA DRIVE OUTPUT Rise Time (10−90%) VDRV from 10 to 90% VCC = VCC(off) + 0.2 V, CL = 1 nF tR − 40 − ns Fall Time (90−10%) VDRV from 90 to 10% VCC = VCC(off) + 0.2 V, CL = 1 nF tF − 30 − ns Source Resistance ROH − 6 − W Sink Resistance ROL − 6 − W Peak Source Current DRV High State, VDRV = 0 V (Note 1) VCC = VCC(off) + 0.2 V, CL = 1 nF ISOURCE − 500 − mA Peak Sink Current DRV Low State, VDRV = VCC (Note 1) VCC = VCC(off) + 0.2 V, CL = 1 nF ISINK − 500 − mA High State Voltage (Low VCC Level) VCC = 9 V, RDRV = 33 kW DRV High State VDRV(low) 8.8 − − V High State Voltage (High VCC Level) VCC = VCC(OVP) – 0.2 V, DRV High State and Unloaded VDRV(clamp) 11.0 13.5 16.0 V CURRENT COMPARATOR Input Pull-Up Current VCS = 0.7 V IBIAS − 1 − mA Maximum Internal Current Setpoint TJ from −40°C to +125°C (No OPP) VLIMIT1 0.752 0.800 0.848 V Abnormal Over-Current Fault Threshold TJ = +25°C (No OPP) VLIMIT2 1.10 1.20 1.30 V Default Internal Voltage Set Point for Frequency Foldback Trip Point ~59% of VLIMIT VFOLD(CS) − 475 − mV Internal Peak Current Setpoint Freeze ~31% of VLIMIT VFREEZE(CS) − 250 − mV Propagation Delay from VLIMIT Detection to Gate Off-State DRV Output Unloaded tDEL − 50 100 ns Leading Edge Blanking Duration tLEB1 − 300 − ns Abnormal Over-Current Fault Blanking Duration for VLIMIT3 tLEB2 − 120 − ns Number of Clock Cycles before Fault Confirmation tCOUNT − 4 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Guaranteed by design 2. CS pin source current is a sum of IBIAS and IOPP, thus at VHV = 125 V is observed the IBIAS only, because IOPC is switched off. |
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