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STQ1HNK60R Datasheet(PDF) 3 Page - STMicroelectronics |
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STQ1HNK60R Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 13 page 3/13 STD1NK60 - STD1NK60-1 - STQ1HNK60R ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF DYNAMIC SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID =1mA, VGS = 0 600 V IDSS Zero Gate Voltage Drain Current (VGS =0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS =0) VGS = ± 30V ±100 nA VGS(th) Gate Threshold Voltage VDS =VGS,ID = 250µA 2.25 3 3.7 V RDS(on) Static Drain-source On Resistance VGS =10V, ID = 0.5 A 8 8.5 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS >ID(on) xRDS(on)max, ID = 0.5 A 1S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V,f= 1MHz,VGS = 0 156 23.5 3.8 pF pF pF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD =300 V, ID = 0.5 A RG = 4.7Ω VGS =10 V (Resistive Load see, Figure 3) 6.5 5 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =480V, ID = 1.0 A, VGS =10V, RG = 4.7Ω 7 1.1 3.4 10 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 300 V, ID = 0.5 A RG =4.7Ω VGS =10 V (Resistive Load see, Figure 3) 19 25 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 480V, ID = 1.0 A, RG =4.7Ω, VGS = 10V (Inductive Load see, Figure 5) 24 25 44 ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 1 4 A A VSD (1) Forward On Voltage ISD = 1.0 A, VGS =0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1.0 A, di/dt = 100A/µs VDD =25V, Tj = 150°C (see test circuit, Figure 5) 229 377 3.3 ns µC A |
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