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ZXGD3109N8 Datasheet(PDF) 6 Page - Diodes Incorporated |
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ZXGD3109N8 Datasheet(HTML) 6 Page - Diodes Incorporated |
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6 / 13 page  ZXGD3109N8 Document Number DS37178 Rev. 1 - 2 6 of 13 www.diodes.com December 2015 © Diodes Incorporated ZXGD3109N8 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Symbol Parameter Conditions Min Typ Max Unit ICCSTART Supply Current (Undervoltage) VCC = 2.6V — 160 220 µA ICCSTANDBY Supply Current (Disabled) VCC = 5.5V, REN/OFF = 0Ω — 380 500 VCC = 12V, REN/OFF = 0Ω — 450 600 ICCON Supply Current (Enabled) VCC = 5.5V, FSW = 100KHz CGATE = 0pF — 1.5 1.8 mA VCC = 12V, FSW = 100KHz CGATE = 0pF — 1.8 2.3 VCC = 5.5V, FSW = 100KHz CGATE = 3,300pF — 3.2 4 VCC = 12V, FSW = 100KHz CGATE = 3,300pF — 5 7 VEN-ON TOFF/EN Turn-on Threshold, Rising TOFF/EN Driven, VTON > 0.6V 1.31 1.4 1.49 V VEN-OFF TOFF/EN Turn-off Threshold, Falling TOFF/EN Driven, VTON > 0.2V 0.55 0.6 0.65 IEN-START TOFF/EN Input Current (Disabled) RTOFF = 50kΩ -23 -20 -17 µA IEN-ON TOFF/EN Input Current (Enabled) RTOFF = 100kΩ -11.5 -10 -8.5 Undervoltage Lockout (UVLO) UVLOTH VCC Undervoltage Lockout Threshold Rising — 2.8 3.0 3.20 V UVLOHYS VCC Undervoltage Lockout Threshold Hysteresis — — 200 — mV MOSFET Voltage Sensing VTHARM Gate Re-Arming Threshold VD to GND, Rising -1.3 1.5 -1.7 V VTHON Gate Turn-On Threshold (VD-VS) Falling, VS = 0V -220 -150 -80 mV VTHOFFLV Gate Turn-Off Threshold (VD-VS) Rising, VS = 0V, VCC < 4.3V -30 -20 -10 mV VTHOFFHV Gate Turn-Off Threshold (VD-VS) Rising, VS = 0V, VCC > 4.3V -10 -4 -1 mV TD(ON) Gate Turn-On Propagation Delay From VTHON to Gate > 1V — 30 52 ns TD(OFF) Gate Turn-Off Propagation Delay From VTHOFF to Gate < 4V — 30 62 ns Minimum On-Time TON-LR Minimum On-Time Low Resistance RTON = 8.25kΩ 0.26 0.34 0.42 µs TON-HR Minimum On-Time High Resistance RTON = 100kΩ 2.2 3 3.8 µs |
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