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SI4946EY Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI4946EY
Description  Dual N-Channel 60-V (D-S), 175C MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI4946EY Datasheet(HTML) 2 Page - Vishay Siliconix

   
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Si4946EY
Vishay Siliconix
www.vishay.com
2-2
Document Number: 70157
S-03950—Rev. D, 26-May-03
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
1
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
2
mA
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V, TJ = 55_C
25
mA
On-State Drain Currentb
ID(on)
VDS = 5 V, VGS = 10 V
20
A
Drain Source On State Resistanceb
rDS( )
VGS = 10 V, ID = 4.5 A
0.045
0.055
W
Drain-Source On-State Resistanceb
rDS(on)
VGS = 4.5 V, ID = 3.9 A
0.055
0.075
W
Forward Transconductanceb
gfs
VDS = 15 V, ID = 4.5 A
13
S
Diode Forward Voltageb
VSD
IS = 2 A, VGS = 0 V
0.9
1.2
V
Dynamica
Total Gate Charge
Qg
19
30
Gate-Source Charge
Qgs
VDS = 30 V, VGS = 10 V, ID = 4.5 A
4
nC
Gate-Drain Charge
Qgd
3
Gate Resistance
Rg
1
3.6
W
Turn-On Delay Time
td(on)
13
20
Rise Time
tr
VDD = 30 V, RL = 30 W
11
20
Turn-Off Delay Time
td(off)
VDD = 30 V, RL = 30 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
36
60
ns
Fall Time
tf
11
20
Source-Drain Reverse Recovery Time
trr
IF = 2 A, di/dt = 100 A/ms
35
60
Notes
a.
For design aid only; not subject to production testing.
b.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.


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