SBR is a registered trademark of Diodes Incorporated.

SBR30E45CT

Document number: DS37816 Rev. 2 - 2

2 of 5

www.diodes.com

March 2016

© Diodes Incorporated

SBR30E45CT

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

45

V

Average Rectified Output Current Per Device

(Per Leg)

(Total)

15

30

A

Non-Repetitive Peak Forward Surge Current 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

250

A

Parameter

Symbol

Value

Unit

Human Body Model ESD Protection

ESD HBM

8

kV

Machine Model ESD Protection

ESD MM

400

V

Caution:

Stresses greater than the 'Absolute Maximum Ratings' specified above may cause permanent damage to the device. These are stress ratings only;

functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be

affected by exposure to absolute maximum rating conditions for extended periods of time.

Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling

and transporting these devices.

Thermal Characteristics (Per Leg)

Characteristic

Symbol

Value

Unit

Operating and Storage Temperature Range

-65 to +150

°C

Typical Thermal Resistance (Per Leg)

Thermal Resistance Junction to Case (Note 5)

Thermal Resistance Junction to Ambient (Note 5)

2

7

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Forward Voltage Drop

-

-

0.47

-

0.55

0.52

0.66

V

Leakage Current (Note 6)

-

-

0.48

100

mA

Notes:

5. Test with Aluminum heatsink 50×50×23mm.

6. Short duration pulse test used to minimize self-heating effect.