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SI4925BDY Datasheet(PDF) 4 Page - Vishay Siliconix

Part No. SI4925BDY
Description  Dual P-Channel 30-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4925BDY Datasheet(HTML) 4 Page - Vishay Siliconix

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Si4925BDY
Vishay Siliconix
www.vishay.com
4
Document Number: 72001
S-50366—Rev. C, 28-Feb-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
VDS − Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified
0
20
30
10
15
Single Pulse Power
Time (sec)
25
10−3
10−2
1
10
600
10−1
10−4
100
−0.4
−0.2
0.0
0.2
0.4
0.6
0.8
−50
−25
0
25
50
75
100
125
150
ID = 250 mA
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Threshold Voltage
TJ − Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 85_C/W
3. TJM − TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
1
100
600
10
10−1
10−2
5
Safe Operating Area
100
1
0.1
1
10
100
0.01
10
TA = 25_C
Single Pulse
P(t) = 10
dc
0.1
IDM Limited
ID(on)
Limited
*rDS(on)
Limited
BVDSS Limited
P(t) = 1
P(t) = 0.1
P(t) = 0.01
P(t) = 0.001
P(t) = 0.0001


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