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SI4925BDY Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI4925BDY Datasheet(HTML) 3 Page - Vishay Siliconix |
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Si4925BDY Vishay Siliconix Document Number: 72001 S-50366—Rev. C, 28-Feb-05 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 500 1000 1500 2000 2500 0 6 12 18 24 30 0.6 0.8 1.0 1.2 1.4 1.6 −50 −25 0 25 50 75 100 125 150 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 0.00 0.02 0.04 0.06 0.08 0 10203040 VDS − Drain-to-Source Voltage (V) Crss Coss Ciss VDS = 15 V ID = 7.1 A ID − Drain Current (A) VGS = 10 V ID = 7.1 A VGS = 10 V Gate Charge On-Resistance vs. Drain Current Qg − Total Gate Charge (nC) Capacitance On-Resistance vs. Junction Temperature TJ − Junction Temperature (_C) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.00 0.02 0.04 0.06 0.08 0 2468 10 ID = 7.1 A 50 10 1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) VGS = 4.5 V TJ = 25_C TJ = 150_C ID = 3 A |
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