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SI4925BDY Datasheet(PDF) 3 Page - Vishay Siliconix

Part No. SI4925BDY
Description  Dual P-Channel 30-V (D-S) MOSFET
Download  6 Pages
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI4925BDY Datasheet(HTML) 3 Page - Vishay Siliconix

   
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Si4925BDY
Vishay Siliconix
Document Number: 72001
S-50366—Rev. C, 28-Feb-05
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
500
1000
1500
2000
2500
0
6
12
18
24
30
0.6
0.8
1.0
1.2
1.4
1.6
−50
−25
0
25
50
75
100
125
150
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
0.00
0.02
0.04
0.06
0.08
0
10203040
VDS − Drain-to-Source Voltage (V)
Crss
Coss
Ciss
VDS = 15 V
ID = 7.1 A
ID − Drain Current (A)
VGS = 10 V
ID = 7.1 A
VGS = 10 V
Gate Charge
On-Resistance vs. Drain Current
Qg − Total Gate Charge (nC)
Capacitance
On-Resistance vs. Junction Temperature
TJ − Junction Temperature (_C)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.00
0.02
0.04
0.06
0.08
0
2468
10
ID = 7.1 A
50
10
1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
VSD − Source-to-Drain Voltage (V)
VGS − Gate-to-Source Voltage (V)
VGS = 4.5 V
TJ = 25_C
TJ = 150_C
ID = 3 A


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