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SI4925BDY Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SI4925BDY
Description  Dual P-Channel 30-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4925BDY Datasheet(HTML) 1 Page - Vishay Siliconix

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FEATURES
D TrenchFETr Power MOSFET
D Advanced High Cell Density
Process
APPLICATIONS
D Load Switches
− Notebook PCs
− Desktop PCs
− Game Stations
Pb-free
Available
Si4925BDY
Vishay Siliconix
Document Number: 72001
S-50366—Rev. C, 28-Feb-05
www.vishay.com
1
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
−30
0.025 @ VGS = −10 V
−7.1
−30
0.041 @ VGS = −4.5 V
−5.5
S1
D1
G1
D1
S2
D2
G2
D2
SO-8
5
6
7
8
Top View
2
3
4
1
S1
G1
D1
P-Channel MOSFET
S2
G2
D2
P-Channel MOSFET
Ordering Information: Si4925BDY
Si4925BDY—T1 (with Tape and Reel)
Si4925BDY—E3 (Lead (Pb)-Free)
Si4925BDY-T1—E3 (Lead (Pb)-Free) with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
VDS
−30
V
Gate-Source Voltage
VGS
"20
V
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
ID
−7.1
−5.3
Continuous Drain Current (TJ = 150_C)a
TA = 70_C
ID
−5.7
−4.3
A
Pulsed Drain Current
IDM
−40
A
continuous Source Current (Diode Conduction)a
IS
−1.7
−0.9
Maximum Power Dissipationa
TA = 25_C
PD
2.0
1.1
W
Maximum Power Dissipationa
TA = 70_C
PD
1.3
0.7
W
Operating Junction and Storage Temperature Range
TJ, Tstg
−55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Mi
J
ti
t A bi ta
t v 10 sec
R
50
62.5
Maximum Junction-to-Ambienta
Steady State
RthJA
85
110
_C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
30
40
C/W
Notes
a.
Surface Mounted on 1 ” x 1” FR4 Board.


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