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SI4366DY Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SI4366DY
Description  N-Channel 30-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI4366DY Datasheet(HTML) 1 Page - Vishay Siliconix

   
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FEATURES
D TrenchFETr Power MOSFET
D Optimized for “Low Side” Synchronous
Rectifier Operation
D 100% RG Tested
APPLICATIONS
D DC/DC Converters
D Synchronous Rectifiers
Si4366DY
Vishay Siliconix
New Product
Document Number: 71852
S-03662—Rev. B, 14-Apr-03
www.vishay.com
2-1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
30
0.0048 @ VGS = 10 V
20
30
0.0055 @ VGS = 4.5 V
19
SO-8
SD
SD
SD
GD
5
6
7
8
Top View
2
3
4
1
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
"12
V
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
ID
20
13
Continuous Drain Current (TJ = 150_C)a
TA = 70_C
ID
15
10
A
Pulsed Drain Current (10
ms Pulse Width)
IDM
60
A
Continuous Source Current (Diode Conduction)a
IS
2.9
1.3
Maximum Power Dissipationa
TA = 25_C
PD
3.5
1.6
W
Maximum Power Dissipationa
TA = 70_C
PD
2.2
1
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction to Ambienta
t
v 10 sec
R
29
35
Maximum Junction-to-Ambienta
Steady State
RthJA
67
80
_C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
13
16
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.


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