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SI1031R Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI1031R Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 4 page  1.5−V Rated Si1031R/X Vishay Siliconix New Product Document Number: 71171 S-31507—Rev. B, 14-Jul-03 www.vishay.com 1 P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 8 @ VGS = -4.5 V - 150 - 20 12 @ VGS = -2.5 V - 125 - 20 15 @ VGS = -1.8 V - 100 20 @ VGS = -1.5 V -30 FEATURES BENEFITS APPLICATIONS D High-Side Switching D Low On-Resistance: 8 W D Low Threshold: 0.9 V (typ) D Fast Switching Speed: 45 ns D 1.8-V Operation D Gate-Source ESD Protection D Ease in Driving Switches D Low Offset (Error) Voltage D Low-Voltage Operation D High-Speed Circuits D Low Battery Voltage Operation D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers SC-75A (SOT - 416): Si1031R SC-89 (SOT - 490): Si1031X Top View 2 1 S D G 3 Marking Code: H SC-75A or SC-89 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Si1031R Si1031X Parameter Symbol 5 secs Steady State 5 secs Steady State Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS "6 V Continuous Drain Current (TJ = 150_C)a TA = 25_C ID - 150 - 140 - 165 - 155 Continuous Drain Current (TJ = 150_C)a TA = 85_C ID -110 - 100 - 150 - 125 mA Pulsed Drain Currenta IDM - 500 - 600 mA Continuous Source Current (diode conduction)a IS - 250 - 200 - 340 - 240 Maximum Power Dissipationa TA = 25_C PD 280 250 340 300 mW Maximum Power Dissipationa TA = 85_C PD 145 130 170 150 mW Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V Notes a. Surface Mounted on FR4 Board. |
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