DTM3A25P20NFDB datasheet(6/10 Pages) DIODES

Part #	DTM3A25P20NFDB

Description	25V PNP LOW SAT TRANSISTOR WITH N-CHANNEL MOSFET

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Manufacturer	DIODES [Diodes Incorporated]

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DTM3A25P20NFDB

Datasheet Number: DS38017 Rev.1 - 2

6 of 10

www.diodes.com

January 2016

DTM3A25P20NFDB

Typical Electrical Characteristics

– MOS N-Channel (@T

A = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 12)

Drain-Source Breakdown Voltage

BVDSS

20



V

VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS



100

nA

VDS = 20V, VGS = 0V

Gate-Source Leakage

IGSS



1.0

µA

VGS = V, VDS = 0V

ON CHARACTERISTICS (Note 12)

Gate Threshold Voltage

VGS(th)

0.5



1.0

V

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS (ON)



0.3

0.4

Ω

VGS = 4.5V, ID = 600mA

0.4

0.5

VGS = 2.5V, ID = 500mA

0.5

0.7

VGS = 1.8V, ID = 350mA

Forward Transfer Admittance

YFS



1.4



S

VDS = 10V, ID = 400mA

Diode Forward Voltage

VSD



0.7

1.2

V

VGS = 0V, ID = 150mA

DYNAMIC CHARACTERISTICS (Note 13)

Input Capacitance

Ciss



60.67



pF

VDS = 16V, VGS = 0V

f = 1.0MHz

Output Capacitance

Coss



9.68



pF

Reverse Transfer Capacitance

Crss



5.37



pF

Total Gate Charge

QG



736.6



pC

VGS = 4.5V, VDS = 10V,

ID = 250mA

Gate-to-Source Charge

QGS



93.6



pC

Gate-to-Drain Charge

QGD



116.6



pC

SWITCHING CHARACTERISTICS

Turn-On Delay Time

td(on)



5.1



ns

VDD = 10V, VGS = 4.5V,

RL = 47Ω, RG = 10Ω,

ID = 200mA

Rise Time

tr



7.4



Turn-Off Delay Time

td(off)



26.7



Fall Time

tf



12.3



Notes:

12. Short duration pulse test used to minimize self-heating effect.

13. Guaranteed by design. Not subject to production testing.

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