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DMNH6042SPS Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMNH6042SPS Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 7 page PowerDI is a registered trademark of Diodes Incorporated. DMNH6042SPS Document number: DS38683 Rev. 1 - 2 2 of 7 www.diodes.com July 2016 © Diodes Incorporated DMNH6042SPS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 7) VGS = 10V Steady State TC = +25°C TC = +100°C ID 24 17 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 35 A Maximum Continuous Body Diode Forward Current (Note 7) IS 24 A Avalanche Current (Note 8) L = 10mH IAS 3.5 A Avalanche Energy (Note 8) L = 10mH EAS 65 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) PD 1.5 W Thermal Resistance, Junction to Ambient (Note 5) Steady state RJA 98 °C/W t<10s 54 Total Power Dissipation (Note 6) PD 2.9 W Thermal Resistance, Junction to Ambient (Note 6) Steady state RJA 51 °C/W t<10s 26 Thermal Resistance, Junction to Case (Note 7) RJC 3.5 Operating and Storage Temperature Range TJ, TSTG -55 to +175 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BVDSS 60 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — 1 µA VDS = 60V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 9) Gate Threshold Voltage VGS(TH) 1.0 — 3.0 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 34 50 m Ω VGS = 10V, ID = 5.1A — 45 65 VGS = 4.5V, ID = 4.4A Diode Forward Voltage VSD — 0.8 1.2 V VGS = 0V, IS = 2.6A DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Ciss — 584 — pF VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 83 — pF Reverse Transfer Capacitance Crss — 24 — pF Gate Resistance Rg — 3.8 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg — 4.2 — nC VDS = 44V, ID = 5.2A Total Gate Charge (VGS = 10V) Qg — 8.8 — nC Gate-Source Charge Qgs — 1.8 — nC Gate-Drain Charge Qgd — 1.8 — nC Turn-On Delay Time tD(ON) — 3.4 — ns VGS = 10V, VDS = 30V, RG = 6Ω, ID = 1A Turn-On Rise Time tR — 1.9 — ns Turn-Off Delay Time tD(OFF) — 10.1 — ns Turn-Off Fall Time tF — 4.5 — ns Body Diode Reverse Recovery Time tRR — 12.9 — ns IF = 2.6A, di/dt = 100A/μs Body Diode Reverse Recovery Charge QRR — 5.4 — nC IF = 2.6A, di/dt = 100A/μs Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. |
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