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DMN6013LFGQ

Document number: DS38870 Rev. 1 - 2

4 of 7

www.diodes.com

June 2016

© Diodes Incorporated

DMN6013LFGQ

T , JUNCTION TEMPERATURE ( C)

Figure 7 On-Resistance Variation with Temperature

J



0

0.004

0.008

0.012

0.016

0.02

0.024

0.028

-50

-25

0

25

50

75

100

125

150

V

= 4.5V

I = 8A

GS

D

V

=

V

I = 10A

GS

D

10

10

100

1000

10000

0

5

10 15 20 25 30 35 40 45 50 55 60

V

Figure 10 Typical Junction Capacitance

f = 1MHz

Q

(nC)

Figure 11 Gate Charge

0

2

4

6

8

10

0

6

12

18

24

30

36

42

48

54

60

V

= 30V

I =

A

DS

D

10

V

, DRAIN-SOURCE VOLTAGE (V)

Figure 12 SOA, Safe Operation Area

DS

I

,

D

R

A

I

N

C

U

R

R

E

N

T

(

A

)

D

R

Limited

DS(ON)

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

0.001

0.01

0.1

1

10

100

0.01

0.1

1

10

100

T

= 150°C

T = 25°C

V

= 10V

Single Pulse

J(max)

A

GS

DUT on 1 * MRP Board

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

I

,

S

O

U

R

C

E

C

U

R

R

E

N

T

(

A

)

S

0

5

10

15

20

25

30

0

0.2

0.4

0.6

0.8

1

1.2

1.4

T = 125°C

A

T = 85°C

A

T = 150°C

A

T = -55°C

A

T = 25°C

A

T , JUNCTION TEMPERATURE ( C)

Figure 8 Gate Threshold Variation vs. Junction Temperature

J



V

,

G

A

T

E

T

H

R

E

S

H

O

L

D

V

O

L

T

A

G

E

(

V

)

G

S

(t

h

)

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

-50

-25

0

25

50

75

100

125

150

I = 1mA

D

I

= 250µA

D