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KSC2982 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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KSC2982 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ©2003 Fairchild Semiconductor Corporation Rev. A3, February 2003 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T a=25°C unless otherwise noted * PW ≤10ms, Duty Cycle≤30% Mounted on Ceramic Board (250mm2x0.8mm) Electrical Characteristics T a=25°C unless otherwise noted hFE1 Classification Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCES Collector-Emitter Voltage 30 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter Base Voltage 6 V IC Collector Current (DC) 2 A ICP * Collector Current (Pulse) 4 A IB Base Current (DC) 0.4 A IBP * Base Current (Pulse) 0.8 A PC PC* Collector Power Dissipation 500 1,000 mW mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 10 V BVEBO Emitter-Base Breakdown Voltage IE=1mA, IC=0 6 V ICBO Collector Cut-off Current VCB=30V, IE=0 100 nA IEBO Emitter Cut-off Current VBE=6V, IC=0 100 nA hFE1 hFE2 DC Current Gain VCE=1V, IC=0.5A VCE=1V, IC=2A 140 70 140 600 VCE (sat) Collector-Emitter Saturation Voltage IC=2A, IB=50mA 0.2 0.5 V VBE (on) Base-Emitter On Voltage VCE=1V, IC=2A 0.86 1.5 V fT Current Gain Bandwidth Product VCE=1V, IC=2A 150 MHz Cob Output Capacitance VCB=10V, IE=0, f=1MHz 27 pF Classification A B C D hFE1 140 ~ 240 200 ~ 330 300 ~ 450 420 ~ 600 KSC2982 Strobe Flash & Medium Power Amplifier • Excellent hFE Linearity : hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage : VCE(sat)=0.5V • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board SSX Marking hFE grade 1. Base 2. Collector 3. Emitter SOT-89 1 |
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