Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

K6F1008V2C-YF70 Datasheet(PDF) 5 Page - Samsung semiconductor

Part # K6F1008V2C-YF70
Description  128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM
Download  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6F1008V2C-YF70 Datasheet(HTML) 5 Page - Samsung semiconductor

  K6F1008V2C-YF70 Datasheet HTML 1Page - Samsung semiconductor K6F1008V2C-YF70 Datasheet HTML 2Page - Samsung semiconductor K6F1008V2C-YF70 Datasheet HTML 3Page - Samsung semiconductor K6F1008V2C-YF70 Datasheet HTML 4Page - Samsung semiconductor K6F1008V2C-YF70 Datasheet HTML 5Page - Samsung semiconductor K6F1008V2C-YF70 Datasheet HTML 6Page - Samsung semiconductor K6F1008V2C-YF70 Datasheet HTML 7Page - Samsung semiconductor K6F1008V2C-YF70 Datasheet HTML 8Page - Samsung semiconductor K6F1008V2C-YF70 Datasheet HTML 9Page - Samsung semiconductor  
Zoom Inzoom in Zoom Outzoom out
 5 / 9 page
background image
CMOS SRAM
K6F1008V2C Family
Revision 1.0
June 2002
5
AC CHARACTERISTICS (Vcc=3.0~3.6V, Industrial product:TA=-40 to 85
°C)
1. The parameter is measured with 30pF test load.
Parameter List
Symbol
Speed Bins
Units
55ns1)
70ns
Min
Max
Min
Max
Read
Read Cycle Time
tRC
55
-
70
-
ns
Address Access Time
tAA
-
55
-
70
ns
Chip Select to Output
tCO
-
55
-
70
ns
Output Enable to Valid Output
tOE
-
25
-
35
ns
Chip Select to Low-Z Output
tLZ
10
-
10
-
ns
Output Enable to Low-Z Output
tOLZ
5
-
5
-
ns
Chip Disable to High-Z Output
tHZ
0
20
0
25
ns
Output Disable to High-Z Output
tOHZ
0
20
0
25
ns
Output Hold from Address Change
tOH
10
-
10
-
ns
Write
Write Cycle Time
tWC
55
-
70
-
ns
Chip Select to End of Write
tCW
45
-
60
-
ns
Address Set-up Time
tAS
0
-
0
-
ns
Address Valid to End of Write
tAW
45
-
60
-
ns
Write Pulse Width
tWP
40
-
50
-
ns
Write Recovery Time
tWR
0
-
0
-
ns
Write to Output High-Z
tWHZ
0
20
0
20
ns
Data to Write Time Overlap
tDW
25
-
30
-
ns
Data Hold from Write Time
tDH
0
-
0
-
ns
End Write to Output Low-Z
tOW
5
-
5
-
ns
DATA RETENTION CHARACTERISTICS
1. CS1
≥Vcc-0.2V, CS2≥Vcc-0.2V(CS1 controlled) or CS2≤0.2V(CS2 controlled)
Item
Symbol
Test Condition
Min
Typ
Max
Unit
Vcc for data retention
VDR
CS1
≥Vcc-0.2V1)
1.5
-
3.6
V
Data retention current
IDR
Vcc=1.5V, CS1
≥Vcc-0.2V1)
-
-
1.0
µA
Data retention set-up time
tSDR
See data retention waveform
0
-
-
ns
Recovery time
tRDR
tRC
-
-
CL1)
1. Including scope and jig capacitance
R22)
R12)
VTM3)
2. R1=3070
, R2=3150Ω
3. VTM =2.8V
AC OPERATING CONDITIONS
TEST CONDITIONS(Test Load and Test Input/Output Reference)
Input pulse level: 0.4 to 2.2V
Input rising and falling time: 5ns
Input and output reference voltage: 1.5V
Output load (See right): CL= 100pF+1TTL
CL = 30pF+1TTL


Similar Part No. - K6F1008V2C-YF70

ManufacturerPart #DatasheetDescription
logo
Samsung semiconductor
K6F1016U4B SAMSUNG-K6F1016U4B Datasheet
162Kb / 9P
   64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1016U4B-F SAMSUNG-K6F1016U4B-F Datasheet
162Kb / 9P
   64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1016U4B-FF55 SAMSUNG-K6F1016U4B-FF55 Datasheet
162Kb / 9P
   64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1016U4B-FF70 SAMSUNG-K6F1016U4B-FF70 Datasheet
162Kb / 9P
   64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1016U4C-AF55 SAMSUNG-K6F1016U4C-AF55 Datasheet
173Kb / 9P
   64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
More results

Similar Description - K6F1008V2C-YF70

ManufacturerPart #DatasheetDescription
logo
Samsung semiconductor
K6T1008C2E SAMSUNG-K6T1008C2E Datasheet
190Kb / 10P
   128Kx8 bit Low Power CMOS Static RAM
K6T1008C2E-TF70T00 SAMSUNG-K6T1008C2E-TF70T00 Datasheet
193Kb / 10P
   128Kx8 bit Low Power CMOS Static RAM
K6X1008C2D SAMSUNG-K6X1008C2D Datasheet
176Kb / 10P
   128Kx8 bit Low Power CMOS Static RAM
K6X1008T2D SAMSUNG-K6X1008T2D Datasheet
153Kb / 9P
   128Kx8 bit Low Power CMOS Static RAM
KM681000E SAMSUNG-KM681000E Datasheet
123Kb / 10P
   128Kx8 bit Low Power CMOS Static RAM
K6F2008V2E SAMSUNG-K6F2008V2E Datasheet
134Kb / 9P
   256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2008S2E SAMSUNG-K6F2008S2E Datasheet
130Kb / 9P
   256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
DS_K6F2008U2E SAMSUNG-DS_K6F2008U2E Datasheet
130Kb / 10P
   256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4016U4G SAMSUNG-K6F4016U4G Datasheet
173Kb / 9P
   256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2008T2E SAMSUNG-K6F2008T2E Datasheet
134Kb / 9P
   256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
More results


Html Pages

1 2 3 4 5 6 7 8 9


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com