K4D551638F-TC36 datasheet(2/16 Pages) SAMSUNG

Part #	K4D551638F-TC36

Description	256Mbit GDDR SDRAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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256M GDDR SDRAM

K4D551638F-TC

- 2 -

Rev 1.7 (June 2004)

Target Spec

Revision History

Revision 1.7 (June 15, 2004) - Target Spec

• Changed VDD/VDDQ of K4D551638F-TC33 from 2.8V + 0.1V to 2.8V(min)/2.95V(max)

Revision 1.6 (March 31, 2004) - Target Spec

• AC Changes : Refer to the AC characteristics of page 13 and 14.

Revision 1.5 (March 18, 2004) - Target Spec

• Added K4D551638F-TC33 in the data sheet.

Revision 1.4 (February 27, 2004) - Target Spec

• Added K4D551638F-TC36/40 in the data sheet.

Revision 1.3 (December 5, 2003)

• Changed VDD/VDDQ of K4D551638F-TC50 from 2.5V + 5% to 2.6V + 0.1V

Revision 1.2 (November 11, 2003)

• "Wrtie-Interrupted by Read Function" is supported

Revision 1.1 (October 13, 2003)

• Defined ICC7 value

Revision 1.0 (October 10, 2003)

• Defined DC spec

• Changed part number of 16Mx16 GDDR F-die from K4D561638F-TC to K4D551638F-TC.

Revision 0.1 (October 2, 2003) - Target Spec

• Added Lead free package part number in the data sheet.

• Removed K4D561638F-TC40 from the data sheet.

Revision 0.0 (July 2, 2003) - Target Spec

• Defined Target Specification

Similar Part No. - K4D551638F-TC36