1

10.2± 0.2

0.8± 0.1

5.0± 0.5

1.4± 0.2

4.5± 0.2

0.4± 0.1

PIN

1.3± 0.1

1

3

2

2

4

0.1± 0.1

FEATURES

Metal-Semiconductor junction with guard ring

D

Epitaxial construction

Low forward voltage drop,low switching losses

High surge capability

MECHANICAL DATA

Terminals: Solderable per

MIL- STD-750,Method 2026

Polarity: As marked

Weight: 0.087 ounces,2.2 gram

Mounting position: Any

Ratings at 25

ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

SBLB SBLB SBLB SBLB SBLB SBLB SBLB SBLB

530

535

540

545

550

560

580

5100

UNITS

Maximum recurrent peak reverse voltage

V

Maximum RMS voltage

V

Maximum DC blocking voltage

V

Maximum average forw ard rectified current

T

Peak forw ard surge current

8.3ms single half-sine-w ave

superimposed on rated load

T

Maximum instantaneous forw ard voltage

@ 5.0A

V

Maximum reverse current

@T

at rated DC blocking voltage @T

Typical thermal resistance

(Note1)

/W

Operating junction temperature range

Storage temperature range

Note: 1. Thermal resistance junction to case.

-55--- + 150

30

35

40

45

50

60

80

100

30

35

40

45

50

60

80

100

21

25

28

32

35

42

56

70

mA

0.5

A

-55--- + 150

3.0

0.55

0.70

0.85

175

33

SBLB530---SBLB5100

A

For use in low voltage,high frequency inverters free

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE: 30 --- 100 V

CURRENT: 5.0 A

The plastic material carries U/L recognition 94V-0

5.0

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Dimensions in millimeters

Diode Semiconductor Korea

www.diode.kr