Electronic Components Datasheet Search |
|
TPS62698YFDR Datasheet(PDF) 3 Page - Texas Instruments |
|
|
TPS62698YFDR Datasheet(HTML) 3 Page - Texas Instruments |
3 / 31 page TPS62692, TPS62693 TPS62694, TPS62698 www.ti.com SLVSAZ1 – DECEMBER 2012 THERMAL INFORMATION TPS6269x THERMAL METRIC(1) UNITS YFD (6 PINS) θJA Junction-to-ambient thermal resistance 132.5 θJCtop Junction-to-case (top) thermal resistance 1.2 θJB Junction-to-board thermal resistance 22.7 °C/W ψJT Junction-to-top characterization parameter 5.7 ψJB Junction-to-board characterization parameter 22.4 θJCbot Junction-to-case (bottom) thermal resistance n/a (1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. _ RECOMMENDED OPERATING CONDITIONS MIN NOM MAX UNIT VIN Input voltage range 2.3 4.8(1) V IO Output current range 0 800 mA L Inductance 0.5 1.8 µH CO Output capacitance 1 5 10 µF TA Ambient temperature –40 85 °C TJ Operating junction temperature –40 125 °C (1) Operation above 4.8V input voltage is not recommended over an extended period of time. ELECTRICAL CHARACTERISTICS Minimum and maximum values are at VIN = 2.3V to 5.5V, VOUT = 2.85V, EN = 1.8V, AUTO mode and TA = –40°C to 85°C; Circuit of Parameter Measurement Information section (unless otherwise noted). Typical values are at VIN = 3.6V, VOUT = 2.85V, EN = 1.8V, AUTO mode and TA = 25°C (unless otherwise noted). PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY CURRENT IO = 0mA. Device not switching 21 50 μA Operating quiescent IQ current IO = 0mA, PWM mode 3.5 mA I(SD) Shutdown current EN = GND 0.2 7 μA Undervoltage lockout UVLO 2.05 2.1 V threshold ENABLE, MODE VIH High-level input voltage 1 V VIL Low-level input voltage 0.4 V Ilkg Input leakage current Input connected to GND or VIN 0.01 1.5 μA POWER SWITCH VIN = V(GS) = 3.6V. PWM mode 165 275 m Ω P-channel MOSFET on rDS(on) resistance VIN = V(GS) = 2.9V. PWM mode 185 350 m Ω P-channel leakage Ilkg V(DS) = 5.5V, -40°C ≤ TJ ≤ 85°C 6 μA current, PMOS VIN = V(GS) = 3.6V. PWM mode 140 250 m Ω N-channel MOSFET on rDS(on) resistance VIN = V(GS) = 2.9V. PWM mode 160 330 m Ω N-channel leakage Ilkg V(DS) = 5.5V, -40°C ≤ TJ ≤ 85°C 6 μA current, NMOS Discharge resistor for rDIS 120 Ω power-down sequence 2.3V ≤ VIN ≤ 4.8V. Open loop 1100 1250 1500 mA P-MOS current limit VIN = 3.6V. Closed loop 900 mA Input current limit under VO shorted to ground 15 mA short-circuit conditions Copyright © 2012, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: TPS62692 TPS62693 TPS62694 TPS62698 |
Similar Part No. - TPS62698YFDR |
|
Similar Description - TPS62698YFDR |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |