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IDT71V016 Datasheet(PDF) 7 Page - Integrated Device Technology

Part No. IDT71V016
Description  3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)
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Maker  IDT [Integrated Device Technology]
Homepage  http://www.idt.com
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IDT71V016 Datasheet(HTML) 7 Page - Integrated Device Technology

   
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6.42
7
IDT71V016, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
Commercial and Industrial Temperature Ranges
PAR
T IN
OBSOLESCENCE
ORDER
71V016SA
FOR
NEW
DESIGNS
Timing Waveform of Write Cycle No. 2 (CS Controlled Timing)(1,4)
NOTES:
1. A write occurs during the overlap of a LOW
CS, LOW BHE or BLE, and a LOW WE.
2.
OE is continuously HIGH. If during a WE controlled write cycle OE is LOW, tWP must be greater than or equal to tWHZ+ tDW to allow the I/O drivers to turn off and data to be placed
on the bus for the required tDW. If
OE is HIGH during a WE controlled write cycle, this requirement does not apply and the minimum write pulse is as short as the specified tWP.
3. During this period, I/O pins are in the output state, and input signals must not be applied.
4. If the
CS LOW or BHE and BLE LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in a high-impedance state.
5. Transition is measured ±200mV from steady state.
Timing Waveform of Write Cycle No. 3 (BHE, BLE Controlled Timing)(1,4)
ADDRESS
CS
DATAIN
3211 drw 10
DATAIN VALID
tWC
tAS
(2)
tCW
tWR
WE
tAW
DATAOUT
tDW
tDH
BHE , BLE
tBW
tWP
ADDRESS
CS
DATAIN
3211 drw 11
DATAIN VALID
tWC
tAS
(2)
tCW
tWR
WE
tAW
DATAOUT
tDW
tDH
BHE, BLE
tBW
tWP


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