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IDT71V016 Datasheet(PDF) 3 Page - Integrated Device Technology

Part No. IDT71V016
Description  3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)
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Maker  IDT [Integrated Device Technology]
Homepage  http://www.idt.com
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IDT71V016 Datasheet(HTML) 3 Page - Integrated Device Technology

   
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6.42
3
IDT71V016, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
Commercial and Industrial Temperature Ranges
PAR
T IN
OBSOLESCENCE
ORDER
71V016SA
FOR
NEW
DESIGNS
Symbol
Parameter
Test Condition
IDT71V016
Unit
Min.
Max.
|ILI|
Input Leakage Current
VDD = Max., VIN = GND to VDD
___
5µ A
|ILO|
Output Leakage Current
VDD = Max.,
CS = VIH, VOUT = GND to VDD
___
5µ A
VOL
Output Low Voltage
IOL = 8mA, VDD = Min.
___
0.4
V
VOH
Output High Voltage
IOH = –4mA, VDD = Min.
2.4
___
V
3211 tbl 07
Capacitance
(TA = +25°C, f = 1.0MHz, SOJ package)
DC Electrical Characteristics
(VDD = 3.3V ± 0.3V, Commercial and Industrial Temperature Ranges)
Absolute Maximum Ratings(1)
Recommended DC Operating
Conditions
Recommended Operating
Temperature and Supply Voltage
DC Electrical Characteristics(1)
(VDD = 3.3V ± 0.3V, VLC = 0.2V, VHC = VDD–0.2V)
NOTES:
1. StressesgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. VDD terminals only.
3. Input, Output,and I/O terminals; 4.6V maximum.
NOTE:
1. VIL (min.) = –1.5V for pulse width less than tRC/2, once per cycle.
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
NOTES:
1. All values are maximum guaranteed values.
2. fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing .
Symbol
Rating
Value
Unit
VTERM(2)
Terminal Voltage with
Respect to GND
–0.5 to +4.6
V
VTERM(3)
Terminal Voltage with
Respect to GND
–0.5 to VCC+0.5
V
TA
Operating Temperature
0 to +70
oC
TBIAS
Temperature Under Bias
–55 to +125
oC
TSTG
Storage Temperature
–55 to +125
oC
PT
Power Dissipation
1.0
W
IOUT
DC Output Current
50
mA
3211 tbl 03
Grade
Temperature
GND
VDD
Commercial
0°C to +70°C
0V
3.3V ± 0.3V
Industrial
–40°C to +85°C
0V
3.3V ± 0.3V
3211 tbl 04
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
Supply Voltage
3.0
3.3
3.6
V
GND
Supply Voltage
0
0
0
V
VIH
Input High Voltage – Inputs
2.0
4.6
V
VIH
Input High Voltage – I/O
2.0
____
VDD+0.3
V
VIL
Input Low Voltage
–0.5(1)
____
0.8
V
3211 tbl 05
Symbol
Parameter
(1)
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
6
pF
CI/O
I/O Capacitance
VOUT = 3dV
7
pF
3211 tbl 06
Symbol
Parameter
71V016S15
71V016S20
Unit
Com'l
Ind.
Com'l.
Ind.
ICC
Dynam ic Operating Current
CS
≤ VIL, Outputs Open, VDD = Max., f = fMAX(2)
130
130
120
120
mA
ISB
Standby Power Supply Current (TTL Level)
CS
≥ VIH, Outputs Open, VDD = Max., f = fMAX(2)
35
35
30
30
mA
ISB1
Standby Power Supply Current (CMOS Level)
CS
≥ VHC, Outputs Open, VDD = Max., f = 0(2)
VIN
≤ VLC or VIN ≥ VHC
5757
mA
3211 tbl 08


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