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TPS622315 Datasheet(PDF) 7 Page - Texas Instruments |
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TPS622315 Datasheet(HTML) 7 Page - Texas Instruments |
7 / 40 page 7 TPS62230, TPS62231, TPS62232, TPS62233, TPS62234, TPS62235, TPS62236 TPS62237, TPS62238, TPS62239, TPS622310, TPS622311, TPS622312 TPS622313, TPS622314, TPS622315, TPS622316, TPS622317, TPS622318, TPS622319 www.ti.com SLVS941G – APRIL 2009 – REVISED AUGUST 2016 Product Folder Links: TPS62230 TPS62231 TPS62232 TPS62233 TPS62234 TPS62235 TPS62236 TPS62237 TPS62238 TPS62239 TPS622310 TPS622311 TPS622312 TPS622313 TPS622314 TPS622315 TPS622316 TPS622317 TPS622318 TPS622319 Submit Documentation Feedback Copyright © 2009–2016, Texas Instruments Incorporated (1) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature (TA(max)) is dependent on the maximum operating junction temperature (TJ(max)), the maximum power dissipation of the device in the application (PD(max)), and the junction-to-ambient thermal resistance of the part/package in the application (RθJA), as given by the following equation: TA(max) = TJ(max) – (RθJA × PD(max)). (2) The minimum required supply voltage for startup is 2.05 V. The part is functional down to the falling under voltage lockout (UVL) threshold. (3) VIN = VO + 1.0 V (4) The internal resistor divider network is disconnected from FB pin. 7.5 Electrical Characteristics VIN = 3.6 V, VOUT = 1.8 V, EN = VIN, MODE = GND, TJ = –40°C to 125°C typical values are at TJ = 25°C (unless otherwise noted), CIN = 2.2 μF, L = 2.2 μH, COUT = 4.7 μF. (1) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY VIN Input voltage(2) 2.05 6 V IQ Operating quiescent current PFM operation (MODE = GND), IOUT = 0 mA, device not switching, TJ = –40°C to 85°C 22 40 μA PFM operation (MODE = GND), IOUT = 0 mA, device switching, VOUT = 1.2 V 25 μA PWM operation (MODE = VIN), IOUT = 0 mA, device switching 3 mA ISD Shutdown current EN = GND, TJ = –40°C to 85°C 0.1 1 μA VUVLO Undervoltage lockout threshold Falling 1.8 1.9 V Rising 1.9 2.05 V ENABLE, MODE THRESHOLD VIH TH Threshold for detecting high EN, MODE 2.05 V ≤ VIN ≤ 6 V , rising edge 0.8 1 V VIL TH HYS Threshold for detecting low EN, MODE 2.05 V ≤ VIN ≤ 6 V , falling edge, TJ = –40°C to 85°C 0.4 0.6 V Rpd Pull-down resistor EN, MODE TPS622319 1 MΩ IIN Input bias current, EN, MODE EN, MODE = GND or VIN, TJ = –40°C to 85°C, except TPS622319 0.01 0.5 μA POWER SWITCH RDS(ON) High side MOSFET ON-resistance VIN = 3.6 V, TJ = –40°C to 85°C 600 850 m Ω Low Side MOSFET ON-resistance 350 480 ILIMF Forward current limit MOSFET high- side VIN = 3.6 V, open-loop 690 850 1050 mA Forward current limit MOSFET low-side 550 840 1220 mA TJSD Thermal shutdown Increasing junction temperature 150 °C Thermal shutdown hysteresis Decreasing junction temperature 20 °C CONTROLLER tONmin Minimum ON-time MODE = VIN, IOUT = 0 mA 135 ns tOFFmin Minimum OFF-time 40 ns OUTPUT VREF Internal reference voltage 0.7 V VOUT Output voltage accuracy(3) MODE = GND, IOUT = 0 mA 0% MODE = VIN, IOUT = 0 mA TJ = 25°C –2% 2% TJ = –40°C to 125°C –2.5% 2.5% DC output voltage load regulation MODE = VIN 0.001 %/mA DC output voltage line regulation MODE = VIN, IOUT = 0 mA, 2.05 V ≤ VIN ≤ 6 V 0 %/V tStart Start-up time Time from active EN to VOUT = 1.8 V, 10-Ω load 100 μs ILK_SW Leakage current into SW pin VIN = VOUT = VSW = 3.6 V, EN = GND (4) , T J = –40°C to 85°C 0.1 0.5 μA |
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