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DS3832C-311 Datasheet(PDF) 14 Page - Dallas Semiconductor |
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DS3832C-311 Datasheet(HTML) 14 Page - Dallas Semiconductor |
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14 / 18 page  DS3832C-311 14 of 18 POWER-DOWN/POWER-UP TIMING (TA = -40 °C to +85°C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES VCC Fail Detect to CE and WE\ Inactive tPD 0 ms 11 VCC Slew from VTP to 0V tF 300 ms VCC Slew from 0V to VTP tR 300 ms VCC Valid to CE and WE Inactive tPU 2ms VCC Valid to End of Write Protection tREC 125 ms VCC Valid to BW Valid tBPU 1s 14 INT Pulse Width (PU/LVL Bit High) tIPW 3ms 15 BATTERY WARNING TIMING (TA = -40 °C to +85°C; VCC = 3.3V ± 0.3V) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Battery Test Cycle tBTC 24 hr Battery Test Pulse Width tBTPW 1s Battery Test to BW Active tBW 1s (TA = +25 °C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Expected Data Retention Time tDR 8 years 10 WARNING: Under no circumstances are negative undershoots, of any amplitude, allowed when this device is in battery backup mode. |
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