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OPA861IDG4 Datasheet(PDF) 5 Page - Texas Instruments |
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OPA861IDG4 Datasheet(HTML) 5 Page - Texas Instruments |
5 / 32 page OPA861 www.ti.com SBOS338G – AUGUST 2005 – REVISED MAY 2013 ELECTRICAL CHARACTERISTICS: VS = +5V RL = 500Ω to VS/2 and RADJ = 250Ω, unless otherwise noted. OPA861ID, IDBV TYP MIN/MAX OVER TEMPERATURE 0°C to –40°C to MIN/ TEST PARAMETER CONDITIONS +25°C +25°C (2) 70°C (3) +85°C (3) UNITS MAX LEVEL (1) OTA—Open-Loop (see Figure 33) AC PERFORMANCE G = +5, VO = 200mVPP, Bandwidth 73 72 72 70 MHz min B RL = 500Ω G = +5, VO = 1VPP 73 MHz typ C Slew Rate G = +5, VO = 2.5V Step 410 395 390 390 V/µs min B Rise Time and Fall Time VO = 1V Step 4.4 ns typ C Harmonic Distortion G = +5, VO = 2VPP, 5MHz 2nd-Harmonic RL = 500Ω –67 –55 –54 –54 dB max B 3rd-Harmonic RL = 500Ω –57 –50 –49 –48 dB max B Base Input Voltage Noise f > 100kHz 2.4 3.0 3.3 3.4 nV/ √Hz max B Base Input Current Noise f > 100kHz 1.7 2.4 2.45 2.5 pA/ √Hz max B Emitter Input Current Noise f > 100kHz 5.2 15.3 16.6 17.5 pA/ √Hz max B OTA DC PERFORMANCE (4) (see Figure 33) Minimum OTA Transconductance (gm) VO = ±10mV, RC = 50Ω, RE = 0Ω 85 70 67 65 mA/V min A Maximum OTA Transconductance (gm) VO = ±10mV, RC = 50Ω, RE = 0Ω 85 140 145 150 mA/V max A B-Input Offset Voltage VB = 0V, RC = 0Ω, RE = 100Ω ±3 ±12 ±15 ±20 mV max A Average B-Input Offset Voltage Drift VB = 0V, RC = 0Ω, RE = 100Ω ±67 ±120 μV/°C max B B-Input Bias Current VB = 0V, RC = 0Ω, RE = 100Ω ±1 ±5 ±6 ±6.6 μA max A Average B-Input Bias Current Drift VB = 0V, RC = 0Ω, RE = 100Ω ±20 ±25 nA/°C max B E-Input Bias Current VB = 0V, VC = 0V ±30 ±100 ±125 ±140 μA max A Average E-Input Bias Current Drift VB = 0V, VC = 0V ±500 ±600 nA/°C max B C-Output Bias Current VB = 0V, VC = 0V ±15 μA typ C OTA INPUT (see Figure 33) Most Positive B-Input Voltage 4.2 3.7 3.6 3.6 V min B Least Positive B-Input Voltage 0.8 1.3 1.4 1.4 V max B B-Input Impedance 455 || 2.1 k Ω || pF typ C Min E-Input Resistance 11.8 14.4 14.9 15.4 Ω max B Max E-Input Resistance 11.8 7.1 6.9 6.7 Ω min B OTA OUTPUT Maximum E-Output Voltage Compliance IE = ±1mA 4.2 3.7 3.6 3.6 V min A Minimum E-Output Voltage Compliance IE = ±1mA 0.8 1.3 1.4 1.4 V max A E-Output Current, Sinking/Sourcing VE = 0 ±8 ±7 ±6.5 ±6.5 mA min A Maximum C-Output Voltage Compliance IC = ±1mA 4.7 4.0 3.9 3.9 V min A Minimum C-Output Voltage Compliance IC = ±1mA 0.3 1.0 1.1 1.1 V max A C-Output Current, Sinking/Sourcing VC = 0 ±8 ±7 ±6.5 ±6.5 mA min A C-Output Impedance 54 || 2 k Ω || pF typ C (1) Test levels: (A) 100% tested at +25°C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information. (2) Junction temperature = ambient for +25°C specifications. (3) Junction temperature = ambient at low temperature limit; junction temperature = ambient + 3°C at high temperature limit for over temperature specifications. (4) Current is considered positive out of node. Copyright © 2005–2013, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: OPA861 |
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