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TPS54010PWPG4 Datasheet(PDF) 4 Page - Texas Instruments |
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TPS54010PWPG4 Datasheet(HTML) 4 Page - Texas Instruments |
4 / 30 page www.ti.com TPS54010 SLVS509B – MAY 2004 – REVISED JUNE 2005 ELECTRICAL CHARACTERISTICS (continued) T J = -40°C to 125°C, VIN = 3 V to 4 V, PVIN = 2.2 V to 4 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ERROR AMPLIFIER Error amplifier open-loop voltage gain 1 k Ω COMP to AGND(4) 90 110 dB Error amplifier unity gain bandwidth Parallel 10 k Ω, 160 pF COMP to AGND(4) 3 5 MHz Error amplifier common mode input voltage Powered by internal LDO(4) 0 VBIAS V range Input bias current, VSENSE VSENSE = Vref 60 250 nA Output voltage slew rate (symmetric), COMP 1 1.4 V/µs PWM COMPARATOR PWM comparator propagation delay time, PWM comparator input to PH pin (excluding 10-mV overdrive(4) 70 85 ns deadtime) SLOW-START/ENABLE Enable threshold voltage, SS/ENA 0.82 1.2 1.4 V Enable hysteresis voltage, SS/ENA(4) 0.03 V Falling edge deglitch, SS/ENA(4) 2.5 µs Internal slow-start time 2.6 3.35 4.1 ms Charge current, SS/ENA SS/ENA = 0 V 2 5 8 µA Discharge current, SS/ENA SS/ENA = 0.2 V, VIN = 2.7 V, PVIN = 2.5 V 1.3 2.3 4 mA POWER GOOD Power-good threshold voltage VSENSE falling 93 %Vref Power-good hysteresis voltage(4) 3 %Vref Power-good falling edge deglitch(4) 35 µs Output saturation voltage, PWRGD I(sink) = 2.5 mA 0.18 0.3 V Leakage current, PWRGD VIN = 3.3 V, PVIN = 2.5 V 1 µA CURRENT LIMIT Current limit VIN = 3.3 V, PVIN = 2.5 V (4), Output shorted 14.5 21 A Current limit leading edge blanking time(4) 100 ns Current limit total response time(4) 200 ns THERMAL SHUTDOWN Thermal shutdown trip point(4) 135 165 °C Thermal shutdown hysteresis(4) 10 °C OUTPUT POWER MOSFETS VIN = 3 V, PVIN = 2.5 V 8 21 rDS(on) Power MOSFET switches m Ω VIN = 3.6 V, PVIN = 2.5 V 8 18 (4) Specified by design 4 |
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