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BF256A Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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BF256A Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 3 page ©2003 Fairchild Semiconductor Corporation Rev. A, June 2003 Absolute Maximum Ratings T a=25°C unless otherwise noted Electrical Characteristics T a=25°C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Current 10 mA PD Total Device Dissipation @TA=25°C Derate above 25 °C 350 2.8 mW mW/ °C TSTG Operating and storage Temperature Range - 55 ~ 150 °C Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)GSS Gate-Source Breakdown Voltage VDS = 0, IG = 1µA-30 V VGS Gate-Source VDS = 15V, ID = 200µA -0.5 -7.5 V VGS(off) Gate-Source Cutoff Voltage VDS = 15V, ID = 10nA -0.5 -8 V IGSS Gate Reverse Current VGS = -20V, VGS = 0 -5 nA On Characteristics IDSS Zero-Gate Voltage Drain Current BF256A BF256B BF256C VGS = 15V, VGS = 0 3 6 11 7 13 18 mA Small Signal Characteristics gfs Common Source Forward Transconductance VDS = 15V, VGS = 0, f = 1KHz 4.5 mmhos BF256A/BF256B/BF256C N-Channel RF Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50. TO-92 1. Gate 2. Source 3. Drain 1 |
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