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5962-95833 Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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5962-95833 Datasheet(HTML) 3 Page - National Semiconductor (TI) |
3 / 14 page Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage (V CC) −0.3V to +6V Input Voltage (D IN) −0.3V to (V CC + 0.3V) Enable Input Voltage (EN, EN*) −0.3V to (V CC + 0.3V) Output Voltage (D OUT+,DOUT−) −0.3V to (V CC + 0.3V) Short Circuit Duration (D OUT+,DOUT−) Continuous Maximum Package Power Dissipation @ +25˚C M Package 1068 mW E Package 1900 mW Derate M Package 8.5 mW/˚C above +25˚C Derate E Package 12.8 mW/˚C above +25˚C Storage Temperature Range −65˚C to +150˚C Lead Temperature Range Soldering (4 sec.) +260˚C Maximum Junction Temperature (DS90C031T) +150˚C Maximum Junction Temperature (DS90C031E) +175˚C ESD Rating (Note 7) (HBM, 1.5 k Ω, 100 pF) ≥ 3,500V (EIAJ, 0 Ω, 200 pF) ≥ 250V Recommended Operating Conditions Min Typ Max Units Supply Voltage (V CC) +4.5 +5.0 +5.5 V Operating Free Air Temperature (T A) DS90C031T −40 +25 +85 ˚C DS90C031E −55 +25 +125 ˚C Electrical Characteristics Over supply voltage and operating temperature ranges, unless otherwise specified. (Notes 2, 3) Symbol Parameter Conditions Pin Min Typ Max Units V OD1 Differential Output Voltage R L = 100Ω (Figure 1)DOUT−, D OUT+ 250 345 450 mV ∆V OD1 Change in Magnitude of V OD1 for Complementary Output States 4 35 |mV| V OS Offset Voltage 1.125 1.25 1.375 V ∆V OS Change in Magnitude of V OS for Complementary Output States 5 25 |mV| V OH Output Voltage High R L = 100Ω 1.41 1.60 V V OL Output Voltage Low 0.90 1.07 V V IH Input Voltage High D IN, EN, EN* 2.0 V CC V V IL Input Voltage Low GND 0.8 V I I Input Current V IN =VCC, GND, 2.5V or 0.4V −10 ±1 +10 µA V CL Input Clamp Voltage I CL = −18 mA −1.5 −0.8 V I OS Output Short Circuit Current V OUT = 0V (Note 8) D OUT−, D OUT+ −3.5 −5.0 mA I OZ Output TRI-STATE Current EN = 0.8V and EN* = 2.0V, V OUT =0VorVCC −10 ±1 +10 µA I CC No Load Supply Current Drivers Enabled D IN =VCC or GND DS90C031T V CC 1.7 3.0 mA D IN = 2.5V or 0.4V 4.0 6.5 mA I CCL Loaded Supply Current Drivers Enabled R L = 100Ω All Channels V IN =VCC or GND (all inputs) DS90C031T 15.4 21.0 mA DS90C031E 15.4 25.0 mA I CCZ No Load Supply Current Drivers Disabled D IN =VCC or GND EN = GND, EN* = V CC DS90C031T 2.2 4.0 mA DS90C031E 2.2 10.0 mA Switching Characteristics V CC = +5.0V, TA = +25˚C DS90C031T. (Notes 3, 4, 6, 9) Symbol Parameter Conditions Min Typ Max Units t PHLD Differential Propagation Delay High to Low R L = 100Ω,CL =5pF ( Figure 2 and Figure 3) 1.0 2.0 3.0 ns t PLHD Differential Propagation Delay Low to High 1.0 2.1 3.0 ns t SKD Differential Skew |t PHLD –tPLHD| 0 80 400 ps t SK1 Channel-to-Channel Skew (Note 4) 0 300 600 ps www.national.com 3 |
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